Thin film transistor deck selection in a memory device

ABSTRACT

Methods, systems, and devices for thin film transistor deck selection in a memory device are described. A memory device may include memory arrays arranged in a stack of decks formed over a substrate, and deck selection components distributed among the layers to leverage common substrate-based circuitry. For example, each memory array of the stack may include a set of digit lines of a corresponding deck, and deck selection circuitry operable to couple the set of digit lines with a column decoder that is shared among multiple decks. To access memory cells of a selected memory array on one deck, the deck selection circuitry corresponding to the memory array may each be activated, while the deck selection circuitry corresponding to a non-selected memory array on another deck may be deactivated. The deck selection circuitry, such as transistors, may leverage thin-film manufacturing techniques, such as various techniques for forming vertical transistors.

FIELD OF TECHNOLOGY

The following relates to memory devices, including thin film transistordeck selection in a memory device.

BACKGROUND

Memory devices are widely used to store information in variouselectronic devices such as computers, user devices, wirelesscommunication devices, cameras, digital displays, and the like.Information is stored by programing memory cells within a memory deviceto various states. For example, binary memory cells may be programmed toone of two supported states, often corresponding to a logic 1 or a logic0. In some examples, a single memory cell may support more than twopossible states, any one of which may be stored by the memory cell. Toaccess information stored by a memory device, a component may read, orsense, the state of one or more memory cells within the memory device.To store information, a component may write, or program, one or morememory cells within the memory device to corresponding states.

Various types of memory devices exist, including magnetic hard disks,random access memory (RAM), read-only memory (ROM), dynamic RAM (DRAM),synchronous dynamic RAM (SDRAM), static RAM (SRAM), ferroelectric RAM(FeRAM), magnetic RAM (MRAM), resistive RAM (RRAM), flash memory, phasechange memory (PCM), 3-dimensional cross-point memory (3D Xpoint),not-or (NOR), and not-and (NAND) memory devices, and others. Memorydevices may be volatile or non-volatile. Volatile memory cells (e.g.,DRAM cells) may lose their programmed states over time unless they areperiodically refreshed by an external power source. Non-volatile memorycells (e.g., NAND memory cells) may maintain their programmed states forextended periods of time even in the absence of an external powersource.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example of a memory device that supports thin filmtransistor deck selection in accordance with examples as disclosedherein.

FIG. 2 illustrates an example of a transistor structure that supportsthin film transistor deck selection in a memory device in accordancewith examples as disclosed herein.

FIG. 3 illustrates an example of a circuit that supports thin filmtransistor deck selection in a memory device in accordance with examplesas disclosed herein.

FIGS. 4 through 7 illustrate example layouts of memory dies that supportthin film transistor deck selection in a memory device in accordancewith examples as disclosed herein.

FIGS. 8 and 9 show flowcharts illustrating methods that support thinfilm transistor deck selection in a memory device in accordance withexamples as disclosed herein.

DETAILED DESCRIPTION

Memory devices may include various arrangements of memory arrays formedover a substrate, where memory cells of the memory arrays may beorganized or addressed in accordance with rows and columns. In someexamples, circuitry that supports accessing or operating the memoryarrays may be located below the memory arrays, which may refer to alocation that is at least in part between the memory arrays and thesubstrate. For example, row decoders or column decoders, among othertypes of decoding circuitry, may be located below the memory arrays butabove the substrate and, in some examples, may include transistors thatare formed at least in part by doping portions of the substrate (e.g.,substrate-based transistors, transistors having channels formed fromdoped crystalline silicon or other semiconductor). As memory devicesscale with a greater quantity of layers or decks above a substrate, thearea of a substrate used for such decoders or other supporting circuitrymay increase, which may lead to various scaling limitations (e.g.,related to the limited area of a substrate to support a growing quantityof decks and, by extension, a growing quantity and area for suchdecoders or other supporting circuitry).

In accordance with examples as disclosed herein, a memory device mayinclude memory arrays arranged in a stack of decks formed over asubstrate, and deck selection components (e.g., deck selectiontransistors, deck decoding or addressing circuitry) may be distributedamong the layers to leverage common substrate-based circuitry. Forexample, each memory array of the stack may include a set of digit linesof a corresponding deck, and deck selection circuitry, such as deckselection transistors or other switching circuitry (e.g., of thecorresponding deck, of another deck) operable to couple the set of digitlines with a column decoder that may be shared among (e.g., coupledwith) multiple decks. To access memory cells of a selected memory arrayon one deck, the deck selection circuitry corresponding to the selectedmemory array may each be activated (e.g., coupling digit lines of theselected memory array with the common column decoder), while the deckselection circuitry corresponding to a non-selected memory array onanother deck may be deactivated (e.g., isolating digit lines of thenon-selected memory array from the common column decoder). Deckselection circuitry, such as deck selection transistors, may leveragethin-film manufacturing techniques, such as various techniques forforming vertical transistors (e.g., transistors having verticalchannels, transistors having channels oriented at least in part along athickness direction of the memory die, transistors havingpolycrystalline silicon channels) above a substrate. Implementing deckselection circuitry at various decks of such a memory die may alleviateor mitigate area utilization challenges of a substrate level, such asmoving certain aspects of decoding or addressing into decks or levelsabove the substrate, which may improve scaling in memory devices bysupporting a greater quantity of decks for a given area ofsubstrate-based circuitry.

Features of the disclosure are initially described in the context of amemory device and related circuitry as described with reference to FIGS.1 through 3. Features of the disclosure are described in the context ofmemory die layouts with reference to FIGS. 4 through 7. These and otherfeatures of the disclosure are further illustrated by and described withreference to flowcharts that relate to methods of formation andoperation of memory devices that support thin film transistor deckselection with references to FIGS. 8 and 9.

FIG. 1 illustrates an example of a memory device 100 that supports thinfilm transistor deck selection in accordance with examples as disclosedherein. The memory device 100 may also be referred to as a memory die,or an electronic memory apparatus. The memory device 100 may includememory cells 105 that are programmable to store different logic states.In some cases, a memory cell 105 may be programmable to store two logicstates, denoted a logic 0 and a logic 1. In some cases, a memory cell105 may be programmable to store more than two logic states (e.g., as amulti-level cell). The set of memory cells 105 may be part of a memoryarray 110 of the memory device 100, where, in some examples, a memoryarray 110 may refer to a contiguous tile of memory cells 105 (e.g., acontiguous set of elements of a semiconductor chip).

In some examples, a memory cell 105 may store an electric chargerepresentative of the programmable logic states (e.g., storing charge ina capacitor, capacitive memory element, or capacitive storage element).In one example, a charged and uncharged capacitor may represent twologic states, respectively. In another example, a positively charged(e.g., a first polarity, a positive polarity) and negatively charged(e.g., a second polarity, a negative polarity) capacitor may representtwo logic states, respectively. DRAM or FeRAM architectures may use suchdesigns, and the capacitor employed may include a dielectric materialwith linear or para-electric polarization properties as an insulator. Insome examples, different levels of charge of a capacitor may representdifferent logic states, which, in some examples, may support more thantwo logic states in a respective memory cell 105. In some examples, suchas FeRAM architectures, a memory cell 105 may include a ferroelectriccapacitor having a ferroelectric material as an insulating (e.g.,non-conductive) layer between terminals of the capacitor. Differentlevels or polarities of polarization of a ferroelectric capacitor mayrepresent different logic states (e.g., supporting two or more logicstates in a respective memory cell 105).

In some examples, a memory cell 105 may include or otherwise beassociated with a configurable material, which may be referred to as amaterial memory element, a material storage element, a material portion,and others. The configurable material may have one or more variable andconfigurable characteristics or properties (e.g., material states) thatmay represent different logic states. For example, a configurablematerial may take different forms, different atomic configurations,different degrees of crystallinity, different atomic distributions, orotherwise maintain different characteristics that may be leveraged torepresent one logic state or another. In some examples, suchcharacteristics may be associated with different electrical resistances,different threshold characteristics, or other properties that aredetectable or distinguishable during a read operation to identify alogic state written to or stored by the configurable material.

In some cases, a configurable material of a memory cell 105 may beassociated with a threshold voltage. For example, electrical current mayflow through the configurable material when a voltage greater than thethreshold voltage is applied across the memory cell 105, and electricalcurrent may not flow through the configurable material, or may flowthrough the configurable material at a rate below some level (e.g.,according to a leakage rate), when a voltage less than the thresholdvoltage is applied across the memory cell 105. Thus, a voltage appliedto memory cells 105 may result in different current flow, or differentperceived resistance, or a change in resistance (e.g., a thresholding orswitching event) depending on whether a configurable material portion ofthe memory cell 105 was written with one logic state or another.Accordingly, the magnitude of current, or other characteristic (e.g.,thresholding behavior, resistance breakdown behavior, snapback behavior)associated with the current that results from applying a read voltage tothe memory cell 105, may be used to determine a logic state written toor stored by memory cell 105.

In the example of memory device 100, each row of memory cells 105 may becoupled with one or more word lines 120 (e.g., WL₁ through WL_(M)), andeach column of memory cells 105 may be coupled with one or more digitlines 130 (e.g., DL₁ through DL_(N)). Each of the word lines 120 anddigit lines 130 may be an example of an access line of the memory device100. In general, one memory cell 105 may be located at the intersectionof (e.g., coupled with, coupled between) a word line 120 and a digitline 130. This intersection may be referred to as an address of a memorycell 105. A target or selected memory cell 105 may be a memory cell 105located at the intersection of an energized or otherwise selected wordline 120 and an energized or otherwise selected digit line 130.

In some architectures, a storage component of a memory cell 105 may beelectrically isolated (e.g., selectively isolated) from a digit line 130by a cell selection component, which, in some examples, may be referredto as a switching component or a selector device of or otherwiseassociated with the memory cell 105. A word line 120 may be coupled withthe cell selection component (e.g., via a control node or terminal ofthe cell selection component), and may control the cell selectioncomponent of the memory cell 105. For example, the cell selectioncomponent may be a transistor and the word line 120 may be coupled witha gate of the transistor (e.g., where a gate node of the transistor maybe a control node of the transistor). Activating a word line 120 mayresult in an electrical connection or closed circuit between arespective logic storing component of one or more memory cells 105 andone or more corresponding digit lines 130, which may be referred to asactivating the one or more memory cells 105 or coupling the one or morememory cells 105 with a respective one or more digit lines 130. A digitline 130 may then be accessed to read from or write to the respectivememory cell 105.

In some examples, memory cells 105 may also be coupled with one or moreplate lines 140 (e.g., PL₁ through PL_(N)). In some examples, each ofthe plate lines 140 may be independently addressable (e.g., supportingindividual selection or biasing). In some examples, the plurality ofplate lines 140 may represent or be otherwise functionally equivalentwith a common plate, or other common node (e.g., a plate node common toeach of the memory cells 105 in the memory array 110). When a memorycell 105 employs a capacitor for storing a logic state, a digit line 130may provide access to a first terminal or a first plate of thecapacitor, and a plate line 140 may provide access to a second terminalor a second plate of the capacitor. Although the plurality of platelines 140 of the memory device 100 are shown as substantially parallelwith the plurality of digit lines 130, in other examples, a plurality ofplate lines 140 may be substantially parallel with the plurality of wordlines 120, or in any other configuration (e.g., a common planarconductor, a common plate layer, a common plate node).

Access operations such as reading, writing, rewriting, and refreshingmay be performed on a memory cell 105 by activating or selecting a wordline 120, a digit line 130, or a plate line 140 coupled with the memorycell 105, which may include applying a voltage, a charge, or a currentto the respective access line. Upon selecting a memory cell 105 (e.g.,in a read operation), a resulting signal may be used to determine thelogic state stored by the memory cell 105. For example, a memory cell105 with a capacitive memory element storing a logic state may beselected, and the resulting flow of charge via an access line orresulting voltage of an access line may be detected to determine theprogrammed logic state stored by the memory cell 105.

Accessing memory cells 105 may be controlled using a row component 125(e.g., a row decoder), a column component 135 (e.g., a column decoder),or a plate component 145 (e.g., a plate decoder), or a combinationthereof. For example, a row component 125 may receive a row address fromthe memory controller 170 and activate a corresponding word line 120based on the received row address. Similarly, a column component 135 mayreceive a column address from the memory controller 170 and activate acorresponding digit line 130. In some examples, such access operationsmay be accompanied by a plate component 145 biasing one or more of theplate lines 140 (e.g., biasing one of the plate lines 140, biasing someor all of the plate lines 140, biasing a common plate).

In some examples, the memory controller 170 may control operations(e.g., read operations, write operations, rewrite operations, refreshoperations) of memory cells 105 using one or more components (e.g., rowcomponent 125, column component 135, plate component 145, sensecomponent 150). In some cases, one or more of the row component 125, thecolumn component 135, the plate component 145, and the sense component150 may be co-located or otherwise included with the memory controller170. The memory controller 170 may generate row and column addresssignals to activate a desired word line 120 and digit line 130. Thememory controller 170 may also generate or control various voltages orcurrents used during the operation of memory device 100.

A memory cell 105 may be read (e.g., sensed) by a sense component 150when the memory cell 105 is accessed (e.g., in cooperation with thememory controller 170) to determine a logic state written to or storedby the memory cell 105. For example, the sense component 150 may beconfigured to evaluate a current or charge transfer through or from thememory cell 105, or a voltage resulting from coupling the memory cell105 with the sense component 150, responsive to a read operation. Thesense component 150 may provide an output signal indicative of the logicstate read from the memory cell 105 to one or more components (e.g., tothe column component 135, the input/output component 160, to the memorycontroller 170).

A sense component 150 may include various switching components,selection components, transistors, amplifiers, capacitors, resistors, orvoltage sources to detect or amplify a difference in sensing signals(e.g., a difference between a read voltage and a reference voltage, adifference between a read current and a reference current, a differencebetween a read charge and a reference charge), which, in some examples,may be referred to as latching. In some examples, a sense component 150may include a collection of components (e.g., circuit elements) that arerepeated for each of a set or subset of digit lines 130 connected to thesense component 150. For example, a sense component 150 may include aseparate sensing circuit (e.g., a separate or duplicated senseamplifier, a separate or duplicated signal development component) foreach of a set or subset of digit lines 130 coupled with the sensecomponent 150, such that a logic state may be separately detected for arespective memory cell 105 coupled with a respective one of the set ofdigit lines 130.

A memory cell 105 may be set, or written, by activating the relevantword line 120, digit line 130, or plate line 140 (e.g., via a memorycontroller 170). In other words, a logic state may be stored in a memorycell 105. A row component 125, a column component 135, or a platecomponent 145 may accept data, for example, via input/output component160, to be written to the memory cells 105. In some examples, a writeoperation may be performed at least in part by a sense component 150, ora write operation may be configured to bypass a sense component 150.

In the case of a capacitive memory element, a memory cell 105 may bewritten by applying a voltage to or across a capacitor, and thenisolating the capacitor (e.g., isolating the capacitor from a voltagesource used to write the memory cell 105, floating the capacitor) tostore a charge in the capacitor associated with a desired logic state.In the case of ferroelectric memory, a ferroelectric memory element(e.g., a ferroelectric capacitor) of a memory cell 105 may be written byapplying a voltage with a magnitude sufficient to polarize theferroelectric memory element (e.g., applying a saturation voltage) witha polarization associated with a desired logic state, and theferroelectric memory element may be isolated (e.g., floating), or a zeronet voltage or bias may be applied across the ferroelectric memoryelement (e.g., grounding, virtually grounding, or equalizing a voltageacross the ferroelectric memory element). In the case of a materialmemory architecture, a memory cell 105 may be written by applying acurrent, voltage, or other heating or biasing to a material memoryelement to configure the material according to a corresponding logicstate.

In some examples, the memory device 100 may include multiple memoryarrays 110 arranged in a stack of decks or levels relative to asubstrate of the memory device 100 (e.g., a semiconductor substrate, acrystalline silicon substrate, a crystalline semiconductor substrate, aportion of a semiconductor wafer). Circuitry that supports accessing oroperating the multiple memory arrays 110 may be located below the memoryarrays 110, which may refer to a location that is at least in partbetween the memory arrays 110 and the substrate. For example, one ormore row components 125, one or more column components 135, one or moreplate components 145, one or more sense components 150, or one or moreinput/output components 160, or any combination thereof may be locatedbelow the memory arrays 110 but above the substrate and, in someexamples, may include transistors that are formed at least in part bydoping portions of the substrate (e.g., substrate-based transistors,transistors having channels formed from doped crystalline silicon orother semiconductor). When scaling the memory device 100 with a greaterquantity of decks or levels of memory arrays 110, the area of asubstrate used for the supporting circuitry may increase, which may leadto scaling limitations (e.g., related to the limited area of a substrateto support circuitry for accessing a growing quantity of decks or levelsof memory arrays 110 and, by extension, a growing quantity and area forsuch decoders or other supporting circuitry), among other challenges.

In accordance with examples as disclosed herein, the memory device 100may include memory arrays 110 arranged in a stack of decks formed over asubstrate, and deck selection components (e.g., deck selectiontransistors, deck decoding or addressing circuitry) distributed amongthe decks to leverage common substrate-based circuitry. For example,each memory array 110 of the stack may include a set of digit lines 130of a corresponding deck, and deck selection circuitry, such astransistors (e.g., of the corresponding deck, of another deck), operableto couple the set of digit lines 130 with a column decoder that isshared (e.g., coupled with, used for accessing or multiplexing) amongmultiple decks. To access memory cells 105 of a selected memory array110 on one deck, deck selection circuitry (e.g., transistors or otherswitching components) corresponding to the selected memory array 110 mayeach be activated (e.g., coupling digit lines 130 of the selected memoryarray with the common column decoder), and the deck selection circuitrycorresponding to a non-selected memory array 110 on another deck may bedeactivated (e.g., isolating digit lines 130 of the non-selected memoryarray from the common column decoder). In some examples, deck selectiontransistors may include thin-film transistors that leverage thin-filmmanufacturing techniques, such as various techniques for formingvertical transistors (e.g., transistors having vertical channels,transistors having channels oriented at least in part along a thicknessdirection relative to a substrate, transistors having channel portionsformed at least in part by polycrystalline silicon). Implementing deckselection circuitry at various decks of such a memory device 100 mayalleviate or mitigate area utilization challenges of a substrate level,such as moving certain aspects of decoding or addressing into decks orlevels above the substrate, which may improve scaling in memory devicesby supporting a greater quantity of decks for a given area ofsubstrate-based circuitry.

FIG. 2 illustrates an example of a transistor structure 200 thatsupports thin film transistor deck selection in a memory device inaccordance with examples as disclosed herein. The transistor structure200 illustrates an example of a transistor that is formed at least inpart by portions of a substrate 220 (e.g., doped portions 240 of thesubstrate 220), and may illustrate an arrangement of features for atransistor that is configured in a planar transistor arrangement. Thesubstrate 220 may be a portion of a semiconductor chip, such as asilicon chip of a memory die (e.g., crystalline silicon, monocrystallinesilicon). For illustrative purposes, aspects of the transistor structure200 may be described with reference to an x-direction, a y-direction,and a z-direction (e.g., a height direction) of a coordinate system 210.In some examples, the z-direction may be illustrative of a directionperpendicular to a surface of the substrate 220 (e.g., a surface in anxy-plane, a surface upon or over which other materials may bedeposited), and each of the structures, illustrated by their respectivecross section in an xz-plane, may extend for some distance (e.g.,length) along the y-direction.

The transistor structure 200 illustrates an example of a transistorchannel, electrically coupled between a terminal 270-a-1 and a terminal270-a-2, that may include one or more doped portions 240 of thesubstrate 220. In various examples, one of the terminals 270-a-1 or270-a-2 may be referred to as a source terminal, and the other of theterminals 270-a-1 or 270-a-2 may be referred to as a drain terminal,where such designation or nomenclature may be based on a configurationor relative biasing of a circuit that includes the transistor structure200. The channel or channel portion of a transistor may include or referto one or more portions of the transistor structure that are operable toopen or close a conductive path (e.g., to modulate a conductivity, toform a channel, to open a channel, to close a channel) between a sourceand drain (e.g., between the terminal 270-a-1 and the terminal 270-a-2)based at least in part on a voltage of a gate (e.g., a gate terminal, agate portion 250). In other words, a channel portion of a transistorstructure may be configured to be activated, deactivated, madeconductive, or made non-conductive, based at least in part on a voltageof a gate portion, such as gate portion 250. In some examples oftransistor structure 200 (e.g., a planar transistor arrangement), thechannel portion formed by one or more doped portions 240 of thesubstrate 220 may support a conductive path in a generally horizontal orin-plane direction (e.g., along the x-direction, within an xy-plane, ina direction within or parallel to a surface of the substrate 220).

In some examples, the gate portion 250 may be physically separated fromthe channel portion (e.g., separated from the substrate 220, separatedfrom one or more of the doped portions 240) by a gate insulation portion260 (e.g., a gate dielectric). Each of the terminals 270 may be incontact with or otherwise coupled with (e.g., electrically, physically)a respective doped portion 240-a, and each of the terminals 270 and thegate portion 250 may be formed from an electrically conductive materialsuch as a metal or metal alloy, or a polycrystalline semiconductor(e.g., polysilicon).

In some examples, the transistor structure 200 may be operable as ann-type or n-channel transistor, where applying a relatively positivevoltage to the gate portion 250 that is above a threshold voltage (e.g.,an applied voltage having a positive magnitude, relative to a sourceterminal, that is greater than a threshold voltage) activates thechannel portion or otherwise enables a conductive path between theterminals 270-a-1 and 270-a-2 (e.g., along a direction generally alignedwith the x-direction within the substrate 220). In such examples, thedoped portions 240-a may refer to portions having n-type doping orn-type semiconductor, and doped portion 240-b may refer to portionshaving p-type doping or p-type semiconductor (e.g., a channel portionhaving an NPN configuration along the x-direction or channel direction).

In some examples, the transistor structure 200 may be operable as ap-type or p-channel transistor, where applying a relatively negativevoltage to the gate portion 250 that is above a threshold voltage (e.g.,an applied voltage having a negative magnitude, relative to a sourceterminal, that is greater than a threshold voltage) activates thechannel portion or otherwise enables a conductive path between theterminals 270-a-1 and 270-a-2. In such examples, the doped portions240-a may refer to portions having p-type doping or p-typesemiconductor, and doped portion 240-b may refer to portions havingn-type doping or n-type semiconductor (e.g., a channel portion having aPNP configuration along the x-direction or channel direction).

In some examples, circuitry operable to support access operations onmemory cells 105 (e.g., a row component 125, a column component 135, aplate component 145, a sense component 150, a memory controller 170, orvarious combinations thereof) may be formed from respective sets oftransistors each having the arrangement of the transistor structure 200,where each of the transistors may have a channel portion formed byrespective doped portions 240 of a substrate 220. In some examples, suchtransistors may leverage a crystalline semiconductor material of thesubstrate 220 for various performance characteristics or manufacturingcharacteristics of such a material or an arrangement. Some examples ofsuch an arrangement may be implemented in a complementarymetal-oxide-semiconductor (CMOS) configuration, which may refer tovarious examples of a complementary and symmetrical pair of a p-typetransistor and an n-type transistor (e.g., for logic functions).However, such structures or arrangements of substrate-based transistorsmay be limited by an available area of the substrate 220 (e.g., under amemory array 110 or stack of levels or decks of memory arrays 110).

In accordance with examples as disclosed herein, various aspects of acolumn component 135 may be alternatively located away from (e.g.,above) a substrate 220, including distributing various components orcircuitry to levels or decks of a stack of memory arrays 110. Forexample, certain circuitry, such as transistors, that support aspects ofdecoding or addressing associated with the column component 135 may beformed in one or more layers or levels above a substrate 220, where suchtransistors may include or be referred to as thin film transistors, orvertical transistors, among other configurations or terminology.

FIG. 3 illustrates an example of a circuit 300 that supports thin filmtransistor deck selection in a memory device in accordance with examplesas disclosed herein. The circuit 300 may include a plurality of j memoryarrays 110-a (e.g., memory arrays 110-a-1 through 110-a-j), each ofwhich may be associated with a deck (e.g., a level, a vertical position,a height) above a substrate of a memory die (e.g., a substrate 220). Forthe sake of illustrative clarity, components of a memory array 110-a aredescribed with reference to a first memory array 110-a-1, but each ofthe memory arrays 110-a-1 through 110-a-j of the circuit 300 may beassociated with respective components or functionality, that is similar,different, or some combination thereof.

The first memory array 110-a-1 may include a set of memory cells 105-a(e.g., memory cells 105-a-11 through 105-a-mn, a set of memory cells 105associated with the first memory array 110-a-1), which may be arrangedaccording to m columns and n rows. In the example of circuit 300, eachof the memory cells 105-a includes a respective capacitor 320-a and arespective cell selection component 330-a (e.g., a cell selectiontransistor). In some examples, one or more of the capacitors 320-a maybe ferroelectric capacitors operable to store a charge or polarizationcorresponding to a logic state (e.g., for ferroelectric memory cells105-a, according to a ferroelectric memory architecture). Aferroelectric material used in a ferroelectric capacitor 320 may becharacterized by an electric polarization where the material maintains anon-zero electric charge in the absence of an electric field. Electricpolarization within a ferroelectric capacitor 320 results in a netcharge at the surface of the ferroelectric material, and attractsopposite charge through the terminals of the ferroelectric capacitor320. Thus, charge may be stored at the interface of the ferroelectricmaterial and the capacitor terminals. In some examples, memory cells105-a may include storage elements of different memory architectures,such as linear capacitors (e.g., in a DRAM application), transistors(e.g., in a NAND application, in an SRAM application), or materialmemory elements (e.g., chalcogenide storage elements, resistive storageelements, thresholding storage elements), among other types of storageelements.

Each of the memory cells 105-a may be coupled with a word line 120(e.g., one of word lines 120-a-1 through 120-a-n), a digit line 130(e.g., one of digit lines 130-a-1 through 130-a-m), and a plate line140-a. In some illustrative examples, memory cells 105-a-11 through105-a-1 n may represent a set or column of memory cells 105 coupled withor between a digit line 130 (e.g., digit line 130-a-1) and the plateline 140-a. In some illustrative examples, memory cells 105-a-11 through105-a-ml may represent a set or row of memory cells 105 coupled with aword line 120 (e.g., word line 120-a-1). Although the memory array110-a-1 is illustrated as including a common plate line 140-a for all ofthe memory cells 105-a, some examples of a circuit 300 may include aseparate plate lines 140 for each row of memory cells 105-a (e.g., anindependently accessible plate line 140 associated with each of the wordlines 120-a) or separate plate lines 140 for each column of memory cells105-a (e.g., an independently accessible plate line 140 associated witheach of the digit lines 130-a), among other configurations.

Each of the word lines 120-a (e.g., each of the word lines WL₁ throughWL_(n)) may be associated with a respective word line voltage V_(WL) asillustrated, and may be coupled with a row component 125-a (e.g., a rowdecoder). The row component 125-a may couple one or more of the wordlines 120-a with various voltage sources (not shown). In someillustrative examples, the row component 125-a may selectively coupleone or more of the word lines 120-a with a voltage source having arelatively high voltage (e.g., a selection voltage, which may be avoltage greater than 0V) or a voltage source having a relatively lowvoltage (e.g., a deselection voltage, which may be a ground voltage of0V, or a negative voltage). Each of the digit lines 130-a (e.g., each ofthe digit lines DL₁ through DL_(m)) may be associated with a respectivedigit line voltage V_(DL) as illustrated, and a memory cell 105-a, orcapacitor 320-a or other storage element thereof, may be coupled with adigit line 130-a based at least in part on an activation or activationvoltage of an associated word line 120-a.

In some examples, the row component 125-a may be shared among (e.g.,coupled with, used for decoding, addressing, or accessing) the memoryarrays 110-a-1 through 110-a-j, and an activation of a word line 120-aof the memory array 110-a-1 may be accompanied by a correspondingactivation of a word line 120 of one or more of the other memory arrays110-a (e.g., activating a row in each of the memory arrays 110-a-1through 110-a-j, activating a row in a subset of the memory arrays110-a-1 through 110-a-j). For example, each output terminal or node ofthe row component 125-a may be coupled with a respective word line 120of each of the memory arrays 110-a-1 through 110-a-a-j, or some subsetthereof, which may include interconnections (e.g., vias, sockets,through-silicon vias (TSVs)) through the decks or levels of the memorydevice 100 or memory die that includes the circuit 300 to interconnectword lines 120 of the different decks or levels (e.g., of different onesof the memory arrays 110-a).

The plate line 140-a (e.g., plate line PL) may be associated with aplate line voltage V_(PL) as illustrated, and may be coupled with aplate component 145-a (e.g., a plate decoder). The plate component 145-amay couple the plate line 140-a with various voltage sources (notshown). In one example, the plate component 145-a may selectively couplethe plate line 140-a with a voltage source having a relatively highvoltage (e.g., a plate high voltage, which may be a voltage greater than0V) or a voltage source having a relatively low voltage (e.g., a platelow voltage, which may be a ground voltage of 0V, or a negativevoltage).

In some examples, the plate component 145-a may be shared among (e.g.,coupled with, used for decoding, addressing, or accessing) the memoryarrays 110-a-1 through 110-a-j, and an activation of the plate line140-a of the memory array 110-a-1 may be accompanied by a correspondingactivation of a plate line 140 of one or more of the other memory arrays110-a (e.g., activating a common plate in each of the memory arrays110-a-1 through 110-a-j, activating a common plate in a subset of thememory arrays 110-a-1 through 110-a-j). For example, each outputterminal or node of the plate component 145-a may be coupled with arespective plate line 140 of each of the memory arrays 110-a-1 through110-a-j, or some subset thereof, which may include interconnections(e.g., vias, sockets, TSVs) through the decks or levels of the memorydevice 100 or memory die that includes the circuit 300 to interconnectplate lines 140 of the different decks or levels. In some examples, oneor more plate lines 140 of each of the memory arrays 110-a may beindependently addressable, or may be otherwise biased independently fromone another by the plate component 145-a.

The sense component 150-a may include various components for accessing(e.g., reading, writing) the memory cells 105 of the memory arrays110-a-1 through 110-a-j. For example, the sense component 150-a mayinclude a set of i sense amplifiers 340-a (e.g., sense amplifiers340-a-1 through 340-a-1) each coupled between a respective signal line345-a and a reference line 355. Each sense amplifier 340-a may includevarious transistors or amplifiers to detect, convert, or amplify adifference in signals, which may be referred to as latching. Forexample, a sense amplifier 340-a may include circuit elements thatreceive and compare a sense signal voltage (e.g., V_(sig)) of arespective signal line 345-a with a reference signal voltage (e.g.,V_(ref)) of the reference line 355, which may be provided by a referencecomponent 350. An output of a sense amplifier 340 may be driven to ahigher (e.g., a positive) or a lower voltage (e.g., a negative voltage,a ground voltage) based on the comparison at the sense amplifier 390.

In some examples, electrical signals associated with such latching maybe communicated between the sense component 150-a (e.g., senseamplifiers 340-a) and an input/output component 160, for example, viaI/O lines 195 (not shown). In some examples, the sense component 150-amay be in electronic communication with a memory controller (not shown),such as a memory controller 170 described with reference to FIG. 1,which may control various operations of the sense component 150-a. Insome examples, activating a logical signal SE may be referred to as“enabling” or “activating” the sense component 150-a or sense amplifiers340-a thereof. In some examples, activating logical signal SE may bereferred to, or be part of an operation known as “latching” the resultof accessing memory cells 105.

The circuit 300 may implement various techniques for multiplexing thedigit lines 130 with the sense amplifiers 340-a to support accessing thememory cells 105-a. For example, a quantity of sense amplifiers 340-a ofthe sense component 150-a may be less than a quantity of digit lines 130among the memory arrays 110-a-1 through 110-a-j, and certain ones of thedigit lines 130 of the memory arrays 110-a-1 through 110-a-j may becoupled with certain ones of the sense amplifiers 340-a over a givenduration for a performing an access operation. In accordance withexamples as disclosed herein, the circuit 300 may support suchmultiplexing using a combination of a column decoder 360 and a deckdecoder 370, which may refer to a distribution or separation ofcomponents or functionality of a column component 135 described withreference to FIG. 1.

The column decoder 360 may be configured to support multiplexing orcoupling between the i sense amplifiers 340-a or i signal lines 345-a(e.g., signal lines 345-a-1 through 345-a-i, SL₁ through SL_(i)) and mintermediate lines 365 (e.g., intermediate lines 365-a-1 through365-a-m, IL₁ through IL_(m)). In some examples, m may be greater than i,such as m being an integer multiple of i. In some examples, m may beequal to a quantity of digit lines 130 or columns in each of the memoryarrays 110-a-1 through 110-a-j.

The deck decoder 370 may be operable to select from among the memoryarrays 110-a, which may include a selective coupling or isolation viarespective transistors 380-a (e.g., deck selection transistors) betweenintermediate lines 365-a and digit lines 130-a of one or more selectedmemory arrays 110-a. In the example of circuit 300, each memory array110-a may be associated with a respective row of transistors 380-a,which may be activated using a respective deck selection line 375. Forexample, memory array 110-a-1 may be associated with transistors380-a-11 through 380-a-1 m and a deck selection line 375-a-1, memoryarray 110-a-j may be associated with transistors 380-a-j1 through380-a-jm and a deck selection line 375-a-j, and so on. In some examples,a quantity of memory arrays 110-a and deck selection lines 375-a (e.g.,a quantity j) may be equal to a quantity of decks or levels of thecircuit 300 (e.g., of a memory device 100 or a memory die that includesthe circuit 300). In some examples (e.g., when multiple memory arrays110-a are located on a same deck or level), a quantity of memory arrays110-a and deck selection lines 375-a may be greater than a quantity ofdecks or levels (e.g., an integer multiple of decks or levels).

In some examples, when an access operation is to be performed on memorycells 105-a of the memory array 110-a-1, the deck decoder 370 mayactivate the deck selection line 375-a-1. Activating the deck selectionline 375-a-1 may activate each of the transistors 380-a-11 through380-a-1 m, thereby coupling the digit lines 130-a-1 through 130-a-m withthe column decoder 360 (e.g., via intermediate lines 365-a-1 through365-a-m). The column decoder 360 may be accordingly operable forcoupling one or more of the digit lines 130-a-1 through 130-a-m of theselected memory array 110-a-1 with the sense amplifiers 340-a-1 through340-a-i to support various access operations (e.g., read operations,write operations).

In some examples, when an access operation is to be performed on memorycells 105-a of the memory array 110-a-1, the deck decoder 370 maydeactivate other deck selection lines 375 (e.g., deck selection line375-a-j, among others), which may deactivate each of the othertransistors 380 (e.g., transistors 380-a-j1 through 380-a-jm, amongothers), thereby decoupling the digit lines 130 of the other memoryarrays 110-a from the column decoder 360 (e.g., from intermediate lines365-a-1 through 365-a-m). In some examples, such an isolation mayimprove read margins, power consumption, or other operation of thecircuit 300, due to reduced intrinsic capacitance from the perspectiveof the sense amplifiers 340-a, or reduced charge leakage or dissipation(e.g., via unselected memory arrays 110-a), among other phenomena.Moreover, such isolation may support simplified row decoding (e.g., whenword lines 120 of different memory arrays 110-a are coupled with a sameor common output of the row component 125-a), since rows of multiplememory arrays 110-a may be activated while only the digit lines 130 ofcertain selected memory arrays 110-a may be coupled with circuitrysupporting a given access operation.

The configuration of components in the circuit 300 may also supportimproved flexibility for layout or formation of a memory device 100 ormemory die that includes the circuit 300. For example, the row component125-a, the plate component 145-a, the sense component 150-a, thereference component 350, or the column decoder 360, or variouscombinations thereof, may be formed at least in part by circuitry thatis below the memory arrays 110-a, or at least on another deck or levelthan the memory arrays 110-a. In some examples, such circuitry may beformed at least in part on a substrate (e.g., a substrate 220, acrystalline semiconductor portion), and may include variousconfigurations of substrate-based transistors (e.g., in accordance withthe transistor structure 200, including one or more sets of transistorsin a CMOS configuration). However, in some examples, the area of suchcircuitry may be greater than an area of each of the memory arrays110-a, which may limit scaling of the circuit 300 on a memory die, orresult in relatively inefficient substrate utilization.

In accordance with examples as disclosed herein, the transistors 380 maybe located above a substrate, including various locations among thedecks or levels of the memory arrays 110-a (e.g., distributed among oneor more decks or levels of a plurality of decks or levels above thesubstrate). For example, the transistors 380 may be formed using thinfilm fabrication techniques, such as including respective channelportions formed from polycrystalline semiconductor material (e.g.,deposited over a substrate 220). In some examples, the transistors 380may be formed as vertical transistors (e.g., transistors having achannel portion that is aligned in a height direction relative to asubstrate 220), including various configurations that leverage one ormore pillars of channel material having a conductivity that may bemodulated based on a voltage of a respective gate portion. By moving thetransistors 380 above a substrate, the circuit 300 may support improvedflexibility for distributing decoding circuitry throughout a memory die,which may improve area utilization, or semiconductor materialutilization, among other benefits.

FIG. 4 illustrates an example of a memory structure 400 that supportsthin film transistor deck selection in a memory device in accordancewith examples as disclosed herein. The memory structure 400 may beillustrative of portions of a memory device 100 or memory die that maybe formed with or over a substrate 220-a, which may be an example of asubstrate 220 described with reference to FIG. 2. The memory structure400 may illustrate examples for implementing aspects of the circuit 300described with reference to FIG. 3. For illustrative purposes, aspectsof the memory structure 400 may be described with reference to anx-direction, a y-direction, and a z-direction of a coordinate system401. The z-direction may be illustrative of a direction perpendicular toa surface of the substrate 220-a (e.g., a surface in an xy-plane, asurface upon or over which other materials may be deposited), and eachof the related structures, illustrated by their respective cross sectionin an xz-plane, may extend for some distance, or be repeated for somequantity (e.g., according to a pitch dimension), or both along they-direction. In some examples, for illustrative purposes, thex-direction may be aligned with or referred to as a column direction(e.g., along a column of memory cells), and the y-direction may bealigned with or referred to as a row direction (e.g., along a row ofmemory cells 105).

The memory structure 400 illustrates an example of memory arrays 110associated with different levels 420 (e.g., different decks, a stack ofdecks, a stack of levels). For example, the memory array 110-b-1 may beassociated with a level 420-a-1 at a first height or position relativeto the substrate 220-a, and the memory array 110-b-2 may be associatedwith a level 420-a-2 at a second (e.g., different) height or positionrelative to the substrate 220-a (e.g., above the level 420-a-1, relativeto the substrate 220-a). Although the memory structure 400 illustratesan example with two levels 420-a, the described techniques may beapplied in a memory structure having any quantity of two or more levels420.

At least some, if not each of the memory arrays 110-b may include arespective set of memory cells 105-b arranged or addressed according torows (e.g., aligned along the y-direction, addressed according to aposition along the x-direction) and columns (e.g., aligned along thex-direction, addressed according to a position along the y-direction).For example, a column of the memory array 110-b-1 may include n memorycells 105-b-11 through 105-b-1 n, and may be associated with (e.g.,formed upon, formed in contact with, coupled with) a digit lineconductor 410-a-11 (e.g., an example of a digit line 130). In someexamples, a column of the memory array 110-b-2 may include a samequantity of memory cells 105-b, which may or may not be physicallyaligned (e.g., along the z-direction) or overlapping (e.g., when viewedin an xy-plane) with the memory cells 105-b of the memory array 110-b-1.A quantity of columns, m, may be formed by repeating the illustratedmemory cells 105 and digit line conductors 410-a, among other features,along the y-direction.

At least some, if not each of the memory cells 105-b in the memorystructure 400 may include a respective capacitor 320-b and a respectivecell selection component 330-b (e.g., a transistor). In the example ofmemory structure 400, each of the cell selection components 330-b may beformed as a vertical transistor, which may include a channel portion(e.g., a vertical channel) formed at least in part by a respectivepillar 430-a, or portion thereof (e.g., along the z-direction), and agate portion formed at least in part by a respective word line conductor440-a (e.g., an example of a word line 120). In some examples, the gateportion of a cell selection component 330-b may be a portion or a regionof a word line 120 or word line conductor 440-a that is operable toactivate the channel portion (e.g., to modulate a conductivity of thechannel portion) of the cell selection component 330-b. The word lineconductors 440-a may extend from one memory cell 105-b to another memorycell 105-b along a direction, such as the y-direction (e.g., a rowdirection, along a row of memory cells 105-b), and may be coupled with arow component 125 (not shown) for selecting or activating a row ofmemory cells 105-b (e.g., by biasing the word line conductors 440-a).

In some examples, word line conductors 440-a of one memory array 110-b(e.g., memory array 110-b-1) may be coupled or connected with word lineconductors 440-a of another memory array 110-b (e.g., memory array110-b-2), such that rows of memory cells 105-b may be commonly activatedacross multiple memory arrays 110-b or multiple levels 420-a (e.g., by acommon node or output of a shared row component 125, not shown). In someexamples, interconnections between word line conductors 440-a ofdifferent levels 420-a may be formed at least in part along thez-direction by one or more vias, sockets, or TSVs, which may be locatedat or near a boundary of the memory arrays 110-b (e.g., along they-direction), among other locations relative to the memory arrays 110-b.

Each capacitor 320-b for a memory cell 105-b may include a respectivedielectric portion 450-a formed between a pillar 430-a associated withthe memory cell 105-b and a plate conductor 460-a (e.g., an example of aplate line 140, a plate node, or a common plate). In some examples, aportion of a pillar 430-a of a capacitor 320-b may be a same material orcombination of materials as a portion of the pillar 430-a of acorresponding cell selection component 330-b (e.g., a dopedsemiconductor material, a polycrystalline semiconductor). In someexamples, a portion of a pillar 430-a of capacitor 320-b may be orinclude a different material or combination of materials as a portion ofthe pillar 430-a of a corresponding cell selection component 330-b(e.g., a metal or conductor portion, a metal layer deposited over asurface of the pillar 430-a). In some examples, the dielectric portions450-a may be formed with a ferroelectric material operable to maintain anon-zero electric charge (e.g., corresponding to a stored logic state)in the absence of an electric field.

In the example of memory structure 400, the memory array 110-b-1 may beassociated with (e.g., coupled with, include, be accessed using) a plateconductor 460-a-1 and the memory array 110-b-2 may be associated with(e.g., coupled with, include, be accessed using) a plate conductor460-a-2. Each of the plate conductors 460-a may be coupled with a platecomponent 145 (not shown) for biasing the plate conductors 460-a. In theexample of memory structure 400, each plate conductor 460-a may beassociated with at least a column of memory cells 105-b. In someexamples, each of the plate conductors 460-a may also extend along they-direction along a row of memory cells 105-b, in which case each of theplate conductors 460-a may be associated with all of the memory cells105-b of a respective memory array 110-b. In some examples, a plateconductor 460-a may be a metal or other conductor formed over or betweenthe dielectric portions 450-a of the memory cells 105-b of therespective memory array 110-b.

In the example of memory structure 400, each column of memory cells105-b of each memory array 110-b may be associated with a respectivetransistor 380-b, which may also be formed as a vertical transistor.Each transistor 380-b may be operable to couple a respective digit lineconductor 410-a with an intermediate line conductor 465-a (e.g., anexample of an intermediate line 365). In the example of memory structure400, each intermediate line conductor 465-a may be a combination ofhorizontal metal layers formed in contact with (e.g., above, oppositethe digit line conductors 410-a) the pillars 470-a and a verticalportion coupled with the column decoder 360-a that may be formed by oneor more vias, sockets, or TSVs. In the example of memory structure 400,to support m columns per memory array 110-b, m intermediate lineconductors 465-a may be formed along the y-direction, and eachintermediate line conductor 465-a may be coupled or connected with atransistor 380-b of each memory array 110-b or each level 420-a (e.g.,intermediate line conductor 465-a-1 being coupled with transistors380-b-11 and 380-b-21).

At least some, if not each deck selection transistor 380-a may include achannel portion (e.g., a vertical channel) formed at least in part byone or more respective pillars 470-a and a gate portion formed at leastin part by one or more respective deck selection conductors 480-a (e.g.,an example of a deck selection line 375). In some examples, the gateportion of a transistor 380-b may be a portion or a region of a deckselection line 375 that is operable to activate the channel portion(e.g., to modulate a conductivity of the channel portion) of thetransistor 380-b. The deck selection conductors 480-a may extend fromone column of memory cells 105-b to another, or from one transistor380-b to another, along a direction, such as the y-direction (e.g.,along a row direction, along a row of memory cells 105), and may becoupled with a deck decoder 370 (not shown) for selecting or activatinga memory array 110-b (e.g., by biasing the deck selection conductors480-a, by activating a row of transistors 380-b).

The set of m intermediate line conductors 465-a may be coupled with acolumn decoder 360-a, which may, in turn, be coupled with a sensecomponent 150-b (e.g., via a plurality of signal lines 345).Accordingly, a combination of a deck decoder 370 (not shown) and thecolumn decoder 360-a, may be used to multiplex, address, or otherwiseselectively couple the digit line conductors 410-a of the memory arrays110-b-a and 110-b-2 with the sense component 150-b, or sense amplifiers340 thereof, to support various access operations. In some examples,circuitry of the deck decoder 370, the column decoder 360-a, or thesense component 150-b may be substrate-based, such as includingtransistors formed at least in part by a doped portion of the substrate220-a (e.g., in accordance with the transistor structure 200,transistors configured in a CMOS arrangement). By including thetransistors 380-b in locations above the substrate 220-a, the memorystructure 400 may support improved flexibility for distributing decodingcircuitry throughout a memory die, which may improve area utilization,or semiconductor material utilization, among other benefits.

In various examples, each of the pillars 430 and 470 may be operable tosupport at least a portion of a channel of a respective transistor(e.g., a channel or operable conductive path aligned along thez-direction, supporting an electrical coupling or conductive pathbetween source and drain terminals based at least in part on a voltageof a respective gate portion, gate terminal, or gate conductor), and mayinclude one or more doped semiconductor portions. For example, tosupport an n-type transistor, a pillar 430 or a pillar 470 may includeat least a p-type semiconductor portion, or may include a stack (e.g.,in the z-direction) of an n-type semiconductor, a p-type semiconductor,and an n-type semiconductor (e.g., in an NPN arrangement along thez-direction), among other constituent materials or arrangements. Tosupport a p-type transistor, a pillar 430 or a pillar 470 may include atleast an n-type semiconductor portion, or may include a stack (e.g.,along the z-direction) of a p-type semiconductor, an n-typesemiconductor, and a p-type semiconductor (e.g., in an PNP arrangementin the z-direction), among other constituent materials or arrangements.In some examples, a pillar as described herein (e.g., a pillar 430, apillar 470) may include one or more electrodes or electrode portions,such as an electrode at one or both ends of the pillar (e.g., a top end,a bottom end, or both).

Each of the pillars 430 and 470 may be associated with a height or aheight dimension relative to the substrate (e.g., a lower extent in thez-direction, an upper extent in the z-direction, a span in thez-direction), which may be defined as part of balancing variousperformance criteria of the memory arrays 110. In some examples, aheight dimension or extent in the z-direction of the pillars 430 of amemory array 110 may be the same as or at least partially overlappingwith a height dimension or extent in the z-direction of the pillars 470of the memory array 110. For example, each of the pillars 430 and 470may have a common height dimension (e.g., a common upper extent, acommon lower extent, or both) relative to the substrate. In someexamples, the pillars 430 may have a height or a height dimension thatis different than the pillars 470, such as the pillars 430 having anextended height along the z-direction to support one or more features ofthe capacitors 320. The pillars 430 and 470 may be formed with variouscross-sectional shapes (e.g., in an xy-plane), such as a square shape, arectangular shape, a circular shape, an oval shape, or a polygonalshape, among others, where pillars 430 and 470 may have common ordifferent shapes, or common or different dimensions.

The pillars 430 and 470 may be formed according to various techniques.In some examples, one or more layers or stacks of layers of dopedsemiconductor material may be deposited on or above a substrate (e.g.,on or in contact with a digit line conductor 410, or corresponding metallayer), and portions of the deposited layers located between respectivepillars 430 and 470 (e.g., along the x-direction, along the y-direction)may be etched away or trenched to form the respective pillars. In someexamples, pillars 430 and 470 may be formed from the same material orcombination of materials (e.g., from a same layer or stack of layers).In some examples, such layers may include one or more electrode layers,such as an electrode layer above a stack of doped semiconductor materiallayers, an electrode layer below a stack of doped semiconductor materiallayers, or both, and such electrode layers may be or may not be etchedor trenched along with the pillar formation processes. Additionally oralternatively, in some examples, holes or trenches may be etched througha material (e.g., in the z-direction, through a dielectric material,through a gate dielectric material) and material for the pillars 430 and470 (e.g., one or more doped semiconductor materials, one or moreelectrode materials) may be deposited in the etched holes or trenches.In examples where pillar material is deposited into holes, trenches, orother recesses, pillars 430 and 470 may or may not be formed from a samematerial or combination of materials.

In various examples, a quantity or configuration of pillars 430 and 470for a respective transistor may be defined or chosen for particularcharacteristics, such as an associated drive strength (e.g., drivecurrent), impedance, activation threshold, or leakage characteristic ofa particular transistor or set of transistors. In some examples,multiple pillars 430 or multiple pillars 470 may be described as orconfigured as parallel physical structures (e.g., parallel channels) ofa common transistor or transistor component. For example, asillustrated, each of the transistors 380-b may include or be otherwiseformed with two pillars 470-a. However, in other examples, a transistor380 or a cell selection component 330 may include or be otherwise formedwith any quantity of one or more pillars 470 or 430, respectively.Likewise, in various examples, a capacitor 320 may be formed with orover any quantity of one or more pillars 430. In some examples, eachpillar 430 or 470 of a set that is configured in parallel (e.g.,commonly activated) may be described as or configured as a component ofsingle transistor, such that a corresponding cell selection or deckselection may be described as or configured as having multipletransistors in a parallel arrangement.

In some examples, word line conductors 440 and deck selection conductors480 of a given memory array 110 may be formed using one or more commonoperations, one or more common materials, or otherwise share variousaspects of formation or configuration. For example, word line conductors440 and deck selection conductors 480 may be formed using one or morecommon conductor formation processes (e.g., a common masking process, acommon etching process, a common deposition process, or variouscombinations thereof). In some examples, word line conductors 440 anddeck selection conductors 480 may be formed with a height dimension thatis within or overlapping with a height dimension of at least dopedsemiconductor portions of the pillars 430 and 470 (e.g., supporting thefunction of modulating a conductivity through channel portions of thecell selection components 330 and transistors 380, respectively).

In various examples, word line conductors 440 and deck selectionconductors 480 may be formed from a metal or metal alloy (e.g., copper,tungsten, gold, silver, tin, aluminum, or alloys thereof). Suchconductors may be separated from pillars 430 or 470 (along thex-direction, along the y-direction, along the x-direction and they-direction, in a radial direction) by a gate dielectric that is incontact with portions of the conductor and the respective pillar. Insome examples, gate conductors may be located alongside the respectivepillars (e.g., as a transverse gate, as a pass-by gate, as a pair ofgate conductors on either or both sides of a pillar), includingconductors extending between the pillars along the y-direction andseparated from pillars along the x-direction by a gate dielectric. Insome examples, gate conductors may include at least a portion that wraps(e.g., partially, entirely) around respective pillars (e.g., as awrap-around gate, as a circumferential gate, as an all-around gate),where at least the respective pillars a may be wrapped (e.g., partiallywrapped, entirely wrapped) with a circumferential gate dielectric thatis in contact with the pillar and the conductor. In various examples,the digit line conductors 410 or intermediate line conductors 465, amongother components such as conductors, may be formed from a metal or metalalloy, which may be a same material or a different material asconductors used to support transistor gate portions (e.g., word lineconductors 440, deck selection conductors 480).

In some examples, circuitry of a deck decoder 370 (not shown), thecolumn decoder 360-a, or the sense component 150-b, or any combinationthereof may be substrate-based, such as including transistors formed atleast in part by a doped portion of the substrate 220-b (e.g., inaccordance with the transistor structure 200, transistors configured ina CMOS arrangement). By including the transistors 380-b in locationsabove the substrate 220-a, the memory structure 400 may support improvedflexibility for distributing decoding circuitry throughout a memory die,which may improve area utilization, or semiconductor substrate materialutilization, among other benefits.

FIG. 5 illustrates an example layout of a memory structure 500 thatsupports thin film transistor deck selection in a memory device inaccordance with examples as disclosed herein. The memory structure 500may be illustrative of portions of a memory device 100 or memory diethat may be formed with or over a substrate 220-b, which may be anexample of a substrate 220 described with reference to FIG. 2. Thememory structure 500 may illustrate examples for implementing aspects ofthe circuit 300 described with reference to FIG. 3. For illustrativepurposes, aspects of the memory structure 500 may be described withreference to an x-direction, a y-direction, and a z-direction of acoordinate system 501. The z-direction may be illustrative of adirection perpendicular to a surface of the substrate 220-b (e.g., asurface in an xy-plane, a surface upon or over which other materials maybe deposited), and each of the related structures, illustrated by theirrespective cross section in an xz-plane, may extend for some distance,or be repeated for some quantity (e.g., according to a pitch dimension),or both along the y-direction. In some examples, for illustrativepurposes, the x-direction may be aligned with or referred to as a columndirection (e.g., along a column of memory cells), and the y-directionmay be aligned with or referred to as a row direction (e.g., along a rowof memory cells 105). In some examples, the memory structure 500 mayinclude alternative arrangements of components similar to thosedescribed with reference to the memory structure 400, includingcomponents with similar reference numerals, and descriptions of suchcomponents or their formation with reference to the memory structure 400may be applicable to the components of the memory structure 500.

The memory structure 500 illustrates an example of memory arrays 110associated with different levels 420. For example, the memory arrays110-c-1 and 110-c-3 may be associated with a level 420-b-1 at a firstheight or position relative to the substrate 220-b, and the memoryarrays 110-c-2 and 110-c-4 may be associated with a level 420-b-2 at asecond (e.g., different) height or position relative to the substrate220-b (e.g., above the level 420-b-1, relative to the substrate 220-b).Although the memory structure 500 illustrates an example with two levels420-b, the described techniques may be applied in a memory structurehaving any quantity of two or more levels 420.

The memory structure 500 also illustrates an example of memory arrays110 associated with different sets 510 of memory arrays 110 (e.g.,different subsets of memory arrays 110 that may have different locationsover a substrate 220 along the x-direction, along the y-direction, orboth). For example, the memory arrays 110-c-1 and 110-c-2 may beassociated with a set 510-a-1 and the memory arrays 110-c-3 and 110-c-4may be associated with a set 510-a-2. In some examples, memory arrays110 of a set 510 may be coupled with or otherwise share a respectivecolumn decoder 360. For example, the set 510-a-1 may be associated with(e.g., coupled with, configured for access or addressing using) a columndecoder 360-b-1, and the set 510-a-2 may be associated with a columndecoder 360-b-2. In the example of memory structure 500, the set 510-a-1and the set 510-a-2 may be coupled with or otherwise share a sensecomponent 150-c (e.g., a sense component 150 common to or shared by eachof the memory arrays 110-c of the sets 510-a), which may be accessiblevia the respective column decoder 360-b corresponding to the set 510-a.Although the memory structure 500 illustrates an example with two sets510-a, the described techniques may be applied in a memory structurehaving any quantity of two or more sets 510 (e.g., and associated columndecoders 360 that may be operable to couple with or otherwise share acommon sense component 150-c).

At least some, if not each of the memory arrays 110-c may include arespective set of memory cells 105-c arranged or addressed according torows (e.g., aligned along the y-direction, addressed according to aposition along the x-direction) and columns (e.g., aligned along thex-direction, addressed according to a position along the y-direction).For example, a column of each of the memory arrays 110-c may include nmemory cells, and each may be associated with (e.g., formed upon, formedin contact with, coupled with) a digit line conductor 410-b (e.g., anexample of a digit line 130). A quantity of columns, m, may be formed byrepeating the illustrated memory cells 105-c and digit line conductors410-b, among other features, along the y-direction.

At least some, if not each of the memory cells 105-c in the memorystructure 500 may include a respective capacitor 320-c and a respectivecell selection component 330-c (e.g., a transistor). In the example ofmemory structure 500, each of the cell selection components 330-c may beformed as a vertical transistor, which may include a channel portion(e.g., a vertical channel) formed at least in part by a respectivepillar 430-b, or portion thereof (e.g., along the z-direction), and agate portion formed at least in part by a respective word line conductor440-b (e.g., an example of a word line 120). In some examples, the gateportion of a cell selection component 330-c may be a portion or a regionof a word line 120 or word line conductor 440-b that is operable toactivate the channel portion (e.g., to modulate a conductivity of thechannel portion) of the cell selection component 330-c. The word lineconductors 440-b may extend from one memory cell 105-c to another memorycell 105-c along a direction, such as the y-direction (e.g., a rowdirection, along a row of memory cells 105-c), and may be coupled with arow component 125 (not shown) for selecting or activating a row ofmemory cells 105-c (e.g., by biasing the word line conductors 440-b).

In some examples, word line conductors 440-b of one memory array 110-cmay be coupled or connected with word line conductors 440-b of anothermemory array 110-c, such that rows of memory cells 105-c may be commonlyactivated across multiple memory arrays 110-c, including memory arrays110-c across multiple levels 420-b, or memory arrays 110-c acrossmultiple sets 510-a, or both (e.g., by a common node or output of ashared row component 125, not shown). In examples that support a common,shared, or otherwise concurrent activation across memory arrays 110-cacross multiple levels 420-b, the word line conductors 440-b-1 n and440-b-2 n may be coupled with each other, or coupled with a common orshared output of a row component 125, or the word line conductors440-b-3 n and 440-b-4 n may be coupled with each other, or coupled witha common or shared output of a row component 125, and so on. In examplesthat support a common, shared, or otherwise concurrent activation acrossmemory arrays 110-c across multiple sets 510-a, the word line conductors440-b-1 n and 440-b-3 n may be coupled with each other, or coupled witha common or shared output of a row component 125, or the word lineconductors 440-b-2 n and 440-b-4 n may be coupled with each other, orcoupled with a common or shared output of a row component 125, and soon. In examples that support a common, shared, or otherwise concurrentactivation across memory arrays 110-c across multiple levels 420-b andsets 510-a, the word line conductors 440-b-1 n, 440-b-2 n, 440-b-3 n,and 440-b-4 n may be coupled with each other, or coupled with a commonor shared output of a row component 125, and so on.

In some examples, interconnections between word line conductors 440-b ofdifferent levels 420-b may be formed at least in part along a directionsuch as the z-direction, by one or more vias, sockets, or TSVs, whichmay be located at or near a boundary of the memory arrays 110-c (e.g.,along the y-direction), among other locations relative to the memoryarrays 110-c. In some examples, interconnections between word lineconductors 440-b of different sets 510-a may be formed at least in partalong the x-direction by one or more routing levels or layers, which maybe located at a different position along the z-direction than the memoryarrays 110-c, such as locations above, below, or between the memoryarrays 110-c, among other locations.

Each capacitor 320-c for a memory cell 105-c may include a respectivedielectric portion 450-b formed between a pillar 430-b associated withthe memory cell 105-c and a plate conductor 460-b (e.g., an example of aplate line 140, a plate node, or a common plate). In some examples, aportion of a pillar 430-b of a capacitor 320-b may be a same material orcombination of materials as a portion of the pillar 430-b of acorresponding cell selection component 330-c (e.g., a dopedsemiconductor material, a polycrystalline semiconductor). In someexamples, a portion of a pillar 430-b of capacitor 320-c may be orinclude a different material or combination of materials as a portion ofthe pillar 430-b of a corresponding cell selection component 330-c(e.g., a metal or conductor portion, a metal layer deposited over asurface of the pillar 430-b). In some examples, the dielectric portions450-b may be formed with a ferroelectric material operable to maintain anon-zero electric charge (e.g., corresponding to a stored logic state)in the absence of an electric field.

In the example of memory structure 500, each of the memory arrays 110-cmay be associated with (e.g., coupled with, include, be accessed using)a respective plate conductor 460-b. Each of the plate conductors 460-bmay be coupled with a plate component 145 (not shown) for respectivelybiasing the plate conductors 460-b. In the example of memory structure500, each plate conductor 460-b may be associated with at least a columnof memory cells 105-c. In some examples, each of the plate conductors460-b may also extend along the y-direction along a row of memory cells105-c, in which case each of the plate conductors 460-b may beassociated with all of the memory cells 105-c of a respective memoryarray 110-c.

In the example of memory structure 500, at least some, if not eachcolumn of memory cells 105-c of at least some, if not each memory array110-c may be associated with a respective transistor 380-c, which mayalso be formed as a vertical transistor. At least some, if not eachtransistor 380-c may be operable to couple a respective digit lineconductor 410-b with an intermediate line conductor 465-b (e.g., anexample of an intermediate line 365). In the example of memory structure500, to support m columns per memory array 110-c, m intermediate lineconductors 465-b may be formed along the y-direction for each set 510-a,and each intermediate line conductor 465-b may be coupled or connectedwith a transistor 380-c of each memory array 110-c of each level 420-bof a set 510-a (e.g., intermediate line conductor 465-b-11 being coupledwith transistors 380-c-11 and 380-c-21, intermediate line conductor465-b-21 being coupled with transistors 380-c-31 and 380-c-41).

At least some, if not each deck selection transistor 380-c may include achannel portion (e.g., a vertical channel) formed at least in part byone or more respective pillars 470-b and a gate portion formed at leastin part by one or more respective deck selection conductors 480-b (e.g.,an example of a deck selection line 375). In some examples, the gateportion of a transistor 380-c may be a portion or a region of a deckselection line 375 that is operable to activate the channel portion(e.g., to modulate a conductivity of the channel portion) of thetransistor 380-c. The deck selection conductors 480-b may extend fromone column of memory cells 105-c to another, or from one transistor380-c to another, along a direction, such as the y-direction (e.g.,along a row direction, along a row of memory cells 105), and may becoupled with a deck decoder 370 (not shown) for selecting or activatinga memory array 110-c (e.g., by biasing the deck selection conductors480-b, by activating a row of transistors 380-c).

The set of m intermediate line conductors 465-b of each set 510-a may becoupled with a respective column decoder 360-b, which may, in turn, becoupled with or otherwise operable to couple with a sense component150-c (e.g., a sense component 150 that may be common to each of thecolumn decoders 360-b or all of the memory arrays 110-c, a sensecomponent 150 operable to access memory cells 105-c of all or any of thememory arrays 110-c). In some examples, the memory structure 500 mayinclude switching components 515 for coupling or isolating a respectivecolumn decoder 360-b and the sense component 150-c (e.g., according to alogic signal SW1 to activate the switching component 515-a-1 and a logicsignal SW2 to activate the switching component 515-a-2). Although asingle switching component 515-a is shown for each of the columndecoders 360-b, in some examples, the memory structure 500 may includemultiple switching components 515 (e.g., multiple switching components515 per set 510-a), such as a switching component 515 for each signalline 345 (not shown) of a plurality of signal lines 345 between therespective column decoder 360-b and the sense component 150-c. In otherexamples, such functionality may be included in the column decoders360-b, or included in the sense component 150-c, or distributed betweenthe column decoders 360-b and the sense component 150-c, or anycombination thereof, such that the column decoders 360-b may beotherwise operable to couple with the sense component 150-c.Accordingly, a combination of a deck decoder 370 (not shown), the columndecoders 360-b, and one or more switching components 515 (whereapplicable) may be used to multiplex, address, or otherwise selectivelycouple the digit line conductors 410-b of the memory arrays 110-c-1through 110-c-4 with the sense component 150-c, or sense amplifiers 340thereof, to support various access operations.

Although the memory structure 500 illustrates an example whereintermediate line conductors 465-b and column decoders 360-b are locatedtowards an outer extent along the x-direction, and the sense component150-c is centrally located (e.g., between the column decoders 360-b)along the x-direction, the components of the memory structure 500 may bealternatively arranged. For example, each of the sets 510-a andcorresponding circuitry may be reflected across a yz-plane, such thatthe intermediate line conductors 465-b and column decoders 360-b may becentrally located (e.g., between the memory arrays 110-c, relativelycloser to a middle dimension along the x-direction than an extend of thememory arrays 110-c) along the x-direction, and the digit lineconductors 410-b and memory arrays 110-c of each set 510-a may extendtoward the outer extents along the x-direction. In some examples, thesense component 150-c may still be centrally located, such as beingcentrally located between the column decoders 360-b-1 and 360-b-2. Insome examples, the sense component 150-c may be located in a differentlocation, such as being located at a different position on the substrate220-b along the y-direction, at a different position along thex-direction (e.g., on a same side along the x-direction as both columndecoders 360-b-1 and 360-b-2), or at a different position in thez-direction (e.g., above or below the column decoders 360-b), amongother locations.

In some examples, circuitry of a deck decoder 370 (not shown), thecolumn decoders 360-b, the switching components 515 (where applicable),or the sense component 150-c, or any combination thereof may besubstrate-based, such as including transistors formed at least in partby a doped portion of the substrate 220-b (e.g., in accordance with thetransistor structure 200, transistors configured in a CMOS arrangement).By including the transistors 380-c in locations above the substrate220-b, the memory structure 500 may support improved flexibility fordistributing decoding circuitry throughout a memory die, which mayimprove area utilization, or semiconductor substrate materialutilization, among other benefits. Moreover, by including a sensecomponent 150-c that is accessible by different column decoders 360-b(e.g., a sense component 150 that is common to or shared by the columndecoders 360-b), the memory structure 500 may support improvedflexibility for decoding, addressing, or other operations. For example,a first column decoder 360-b may be coupled with the sense component150-c while a second column decoder 360-b is isolated from the sensecomponent 150-c, which may support some operations being performed viathe first column decoder 360-b using the sense component 150-c (e.g.,sensing of logic states stored by memory cells 105 of one of the memoryarrays 110-c) and other operations being performed without using thesense component 150-c (e.g., row selection or biasing, column selectionor biasing, deck selection, signal development, which may be isolatedfrom the sense component 150-c via the second column decoder 360-b or anassociated switching component 515). In some examples, such techniquesmay support a degree of parallel operation among the memory arrays110-c.

FIG. 6 illustrates an example layout of a memory structure 600 thatsupports thin film transistor deck selection in a memory device inaccordance with examples as disclosed herein. The memory structure 600may be illustrative of portions of a memory device 100 or memory diethat may be formed with or over a substrate 220-c, which may be anexample of a substrate 220 described with reference to FIG. 2. Thememory structure 600 may illustrate examples for implementing aspects ofthe circuit 300 described with reference to FIG. 3. For illustrativepurposes, aspects of the memory structure 600 may be described withreference to an x-direction, a y-direction, and a z-direction of acoordinate system 601. The z-direction may be illustrative of adirection perpendicular to a surface of the substrate 220-c (e.g., asurface in an xy-plane, a surface upon or over which other materials maybe deposited), and each of the related structures, illustrated by theirrespective cross section in an xz-plane, may extend for some distance,or be repeated for some quantity (e.g., according to a pitch dimension),or both along the y-direction. In some examples, for illustrativepurposes, the x-direction may be aligned with or referred to as a columndirection (e.g., along a column of memory cells), and the y-directionmay be aligned with or referred to as a row direction (e.g., along a rowof memory cells 105). In some examples, the memory structure 600 mayinclude alternative arrangements of components similar to thosedescribed with reference to the memory structure 400, includingcomponents with similar reference numerals, and descriptions of suchcomponents or their formation with reference to the memory structure 400may be applicable to the components of the memory structure 600.

The memory structure 600 illustrates an example of memory arrays 110associated with different levels 420. For example, the memory arrays110-d-1 and 110-d-3 may be associated with a level 420-c-1 at a firstheight or position relative to the substrate 220-c, and the memoryarrays 110-d-2 and 110-d-4 may be associated with a level 420-c-2 at asecond (e.g., different) height or position relative to the substrate220-c (e.g., above the level 420-c-1, relative to the substrate 220-c).Although the memory structure 600 illustrates an example with two levels420-c, the described techniques may be applied in a memory structurehaving any quantity of two or more levels 420.

The memory structure 600 also illustrates an example of memory arrays110 associated with different sets 610 of memory arrays 110 (e.g.,different subsets of memory arrays 110 that may have different locationsover a substrate 220 along the x-direction, along the y-direction, orboth). For example, the memory arrays 110-d-1 and 110-d-2 may beassociated with a set 610-a-1 and the memory arrays 110-d-3 and 110-d-4may be associated with a set 610-a-2. In some examples, memory arrays110 of the sets 610 may be coupled with or otherwise share a same columndecoder 360, but different sets 610 may be located on different sides orpositions relative to common intermediate line conductors 465 or othercircuitry. For example, the set 610-a-1 may be located on a first sideof the intermediate line conductors 465-c (e.g., a left side) and theset 610-a-2 may be located on a second side of the intermediate lineconductors 465-c (e.g., a right side).

At least some, if not each of the memory arrays 110-d may include arespective set of memory cells 105-d arranged or addressed according torows (e.g., aligned along the y-direction, addressed according to aposition along the x-direction) and columns (e.g., aligned along thex-direction, addressed according to a position along the y-direction).For example, a column of each of the memory arrays 110-d may include nmemory cells, and each may be associated with (e.g., formed upon, formedin contact with, coupled with) a digit line conductor 410-c (e.g., anexample of a digit line 130). A quantity of columns, m, may be formed byrepeating the illustrated memory cells 105-d and digit line conductors410-c, among other features, along the y-direction.

At least some, if not each of the memory cells 105-d in the memorystructure 600 may include a respective capacitor 320-d and a respectivecell selection component 330-d (e.g., a transistor). In the example ofmemory structure 600, each of the cell selection components 330-d may beformed as a vertical transistor, which may include a channel portion(e.g., a vertical channel) formed at least in part by a respectivepillar 430-c, or portion thereof (e.g., along the z-direction), and agate portion formed at least in part by a respective word line conductor440-c (e.g., an example of a word line 120). In some examples, the gateportion of a cell selection component 330-d may be a portion or a regionof a word line 120 or word line conductor 440-c that is operable toactivate the channel portion (e.g., to modulate a conductivity of thechannel portion) of the cell selection component 330-d. The word lineconductors 440-c may extend from one memory cell 105-d to another memorycell 105-d along a direction, such as the y-direction (e.g., a rowdirection, along a row of memory cells 105-d), and may be coupled with arow component 125 (not shown) for selecting or activating a row ofmemory cells 105-d (e.g., by biasing the word line conductors 440-c).

In some examples, word line conductors 440-c of one memory array 110-dmay be coupled or connected with word line conductors 440-c of anothermemory array 110-d, such that rows of memory cells 105-d may be commonlyactivated across multiple memory arrays 110-d, including memory arrays110-d across multiple levels 420-c, or memory arrays 110-d acrossmultiple sets 610-a, or both (e.g., by a common node or output of ashared row component 125, not shown). In examples that support a common,shared, or otherwise concurrent activation across memory arrays 110-dacross multiple levels 420-c, the word line conductors 440-c-11 and440-c-21 may be coupled with each other, or coupled with a common orshared output of a row component 125, or the word line conductors440-c-31 and 440-c-41 may be coupled with each other, or coupled with acommon or shared output of a row component 125, and so on. In examplesthat support a common, shared, or otherwise concurrent activation acrossmemory arrays 110-d across multiple sets 610-a, the word line conductors440-c-11 and 440-c-31 may be coupled with each other, or coupled with acommon or shared output of a row component 125, or the word lineconductors 440-c-21 and 440-c-41 may be coupled with each other, orcoupled with a common or shared output of a row component 125, and soon. In examples that support a common, shared, or otherwise concurrentactivation across memory arrays 110-d across multiple levels 420-c andsets 610-a, the word line conductors 440-c-11, 440-c-21, 440-c-31, and440-c-41 may be coupled with each other, or coupled with a common orshared output of a row component 125, and so on.

In some examples, interconnections between word line conductors 440-c ofdifferent levels 420-c may be formed at least in part along a direction,such as the z-direction by one or more vias, sockets, or TSVs, which maybe located at or near a boundary of the memory arrays 110-d (e.g., alongthe y-direction), among other locations relative to the memory arrays110-d. In some examples, interconnections between word line conductors440-c of different sets 610-a may be formed at least in part along thex-direction by one or more routing levels or layers, which may belocated at a different position along the z-direction than the memoryarrays 110-d, such as locations above, below, or between the memoryarrays 110-d, among other locations.

At least some if not each capacitor 320-d for a memory cell 105-d mayinclude a respective dielectric portion 450-c formed between a pillar430-c associated with the memory cell 105-d and a plate conductor 460-c(e.g., an example of a plate line 140, a plate node, or a common plate).In some examples, a portion of a pillar 430-c of a capacitor 320-d maybe a same material or combination of materials as a portion of thepillar 430-c of a corresponding cell selection component 330-d (e.g., adoped semiconductor material, a polycrystalline semiconductor). In someexamples, a portion of a pillar 430-c of capacitor 320-d may be orinclude a different material or combination of materials as a portion ofthe pillar 430-c of a corresponding cell selection component 330-d(e.g., a metal or conductor portion, a metal layer deposited over asurface of the pillar 430-c). In some examples, the dielectric portions450-c may be formed with a ferroelectric material operable to maintain anon-zero electric charge (e.g., corresponding to a stored logic state)in the absence of an electric field.

In the example of memory structure 600, at least some, if not each ofthe memory arrays 110-d may be associated with (e.g., coupled with,include, be accessed using) a respective plate conductor 460-c. At leastsome, if not each of the plate conductors 460-c may be coupled with aplate component 145 (not shown) for respectively biasing the plateconductors 460-c. In the example of memory structure 600, each plateconductor 460-c may be associated with at least a column of memory cells105-d. In some examples, each of the plate conductors 460-c may alsoextend along the y-direction along a row of memory cells 105-d, in whichcase each of the plate conductors 460-c may be associated with all ofthe memory cells 105-d of a respective memory array 110-d.

In the example of memory structure 600, at least some, if not eachcolumn of memory cells 105-d of at least some, if not each memory array110-d may be associated with a respective transistor 380-d, which mayalso be formed as a vertical transistor. At least some, if not eachtransistor 380-d may be operable to couple a respective digit lineconductor 410-c with an intermediate line conductor 465-c (e.g., anexample of an intermediate line 365). In the example of memory structure600, to support m columns per memory array 110-d, m intermediate lineconductors 465-c may be formed along the y-direction, and eachintermediate line conductor 465-c may be coupled or connected with atransistor 380-d of each memory array 110-d of each of the levels 420-cand each of the sets 610-a (e.g., intermediate line conductor 465-c-1being coupled with transistors 380-d-11, 380-d-21, 380-d-31 and380-d-41). The set of m intermediate line conductors 465-c may becoupled with a column decoder 360-c, which may, in turn, be coupled withor otherwise operable to couple with a sense component 150-d.

At least some, if not each deck selection transistor 380-d may include achannel portion (e.g., a vertical channel) formed at least in part byone or more respective pillars 470-c and a gate portion formed at leastin part by one or more respective deck selection conductors 480-c (e.g.,an example of a deck selection line 375). In some examples, the gateportion of a transistor 380-d may be a portion or a region of a deckselection line 375 that is operable to activate the channel portion(e.g., to modulate a conductivity of the channel portion) of thetransistor 380-d. The deck selection conductors 480-c may extend fromone column of memory cells 105-d to another, or from one transistor380-d to another, along a direction, such as the y-direction (e.g.,along a row direction, along a row of memory cells 105), and may becoupled with a deck decoder 370 (not shown) for selecting or activatinga memory array 110-d (e.g., by biasing the deck selection conductors480-c, by activating a row of transistors 380-d).

In some examples, circuitry of a deck decoder 370 (not shown), thecolumn decoder 360-c, or the sense component 150-d, or any combinationthereof may be substrate-based, such as including transistors formed atleast in part by a doped portion of the substrate 220-c (e.g., inaccordance with the transistor structure 200, transistors configured ina CMOS arrangement). By including the transistors 380-d in locationsabove the substrate 220-c, the memory structure 600 may support improvedflexibility for distributing decoding circuitry throughout a memory die,which may improve area utilization, or semiconductor substrate materialutilization, among other benefits. Moreover, by implementing commonintermediate line conductors 465-c and a common column decoder 360-c fordifferent levels 420-a and different sets 610-a, the memory structure600 may further leverage distributed deck selection by separatelyaddressing multiple memory arrays 110-d of a same level 420-c. Suchtechniques may further improve area utilization or semiconductorsubstrate material utilization, and also may be implemented forselecting subsets of memory cells 105-d that are associated withrelatively shorter digit line conductors 410-c, or for isolating agreater quantity of memory cells 105-d that are not targeted for accessoperations (e.g., by deactivating transistors 380-d to effectivelyisolate non-selected memory arrays 110-d). In some examples, suchtechniques may reduce an intrinsic capacitance of conductors betweentargeted memory cells 105-d and the sense component 150-d, or may reducean amount of charge leakage during access operations (e.g., vianon-selected memory arrays 110-d), which may improve read margins,improve write margins, or reduce power consumption, among otherbenefits.

FIG. 7 illustrates an example layout of a memory structure 700 thatsupports thin film transistor deck selection in a memory device inaccordance with examples as disclosed herein. The memory structure 700may be illustrative of portions of a memory device 100 or memory diethat may be formed with or over a substrate 220-d, which may be anexample of a substrate 220 described with reference to FIG. 2. Thememory structure 700 may illustrate examples for implementing aspects ofthe circuit 300 described with reference to FIG. 3. For illustrativepurposes, aspects of the memory structure 700 may be described withreference to an x-direction, a y-direction, and a z-direction of acoordinate system 701. The z-direction may be illustrative of adirection perpendicular to a surface of the substrate 220-d (e.g., asurface in an xy-plane, a surface upon or over which other materials maybe deposited), and each of the related structures, illustrated by theirrespective cross section in an xz-plane, may extend for some distance,or be repeated for some quantity (e.g., according to a pitch dimension),or both along the y-direction. In some examples, for illustrativepurposes, the x-direction may be aligned with or referred to as a columndirection (e.g., along a column of memory cells), and the y-directionmay be aligned with or referred to as a row direction (e.g., along a rowof memory cells 105). In some examples, the memory structure 700 mayinclude alternative arrangements of components similar to thosedescribed with reference to the memory structure 400, includingcomponents with similar reference numerals, and descriptions of suchcomponents or their formation with reference to the memory structure 400may be applicable to the components of the memory structure 700.

The memory structure 700 illustrates an example of memory arrays 110associated with different levels 420. For example, the memory arrays110-e-1 and 110-e-3 may be associated with a level 420-d-1 at a firstheight or position relative to the substrate 220-d, and the memoryarrays 110-e-2 and 110-e-4 may be associated with a level 420-d-2 at asecond (e.g., different) height or position relative to the substrate220-d (e.g., above the level 420-d-1, relative to the substrate 220-d).Although the memory structure 700 illustrates an example with two levels420-d, the described techniques may be applied in a memory structurehaving any quantity of two or more levels 420.

The memory structure 700 also illustrates an example of memory arrays110 associated with different sets 710 of memory arrays 110 (e.g.,different subsets of memory arrays 110 that may have different locationsover a substrate 220 along the x-direction, along the y-direction, orboth). For example, the memory arrays 110-e-1 and 110-e-2 may beassociated with a set 710-a-1 and the memory arrays 110-e-3 and 110-e-4may be associated with a set 710-a-2. In some examples, memory arrays110 of the sets 710 may be coupled with or otherwise share a same columndecoder 360, but different sets 710 may be located on different sides orpositions relative to common intermediate line conductors 465 or othercircuitry. For example, the set 710-a-1 may be located on a first sideof the intermediate line conductors 465-d (e.g., a left side) and theset 710-a-2 may be located on a second side of the intermediate lineconductors 465-d (e.g., a right side).

At least some, if not each of the memory arrays 110-e may include arespective set of memory cells 105-e arranged or addressed according torows (e.g., aligned along the y-direction, addressed according to aposition along the x-direction) and columns (e.g., aligned along thex-direction, addressed according to a position along the y-direction).For example, a column of each of the memory arrays 110-e may include nmemory cells, and each may be associated with (e.g., formed upon, formedin contact with, coupled with) a digit line conductor 410-d (e.g., anexample of a digit line 130). A quantity of columns, m, may be formed byrepeating the illustrated memory cells 105-e and digit line conductors410-d, among other features, along the y-direction.

At least some, if not each of the memory cells 105-e in the memorystructure 700 may include a respective capacitor 320-e and a respectivecell selection component 330-e (e.g., a transistor). In the example ofmemory structure 700, each of the cell selection components 330-e may beformed as a vertical transistor, which may include a channel portion(e.g., a vertical channel) formed at least in part by a respectivepillar 430-d, or portion thereof (e.g., along the z-direction), and agate portion formed at least in part by a respective word line conductor440-d (e.g., an example of a word line 120). In some examples, the gateportion of a cell selection component 330-e may be a portion or a regionof a word line 120 or word line conductor 440-d that is operable toactivate the channel portion (e.g., to modulate a conductivity of thechannel portion) of the cell selection component 330-e. The word lineconductors 440-d may extend from one memory cell 105-e to another memorycell 105-e along a direction, such as the y-direction (e.g., a rowdirection, along a row of memory cells 105-e), and may be coupled with arow component 125 (not shown) for selecting or activating a row ofmemory cells 105-e (e.g., by biasing the word line conductors 440-d).

In some examples, word line conductors 440-d of one memory array 110-emay be coupled or connected with word line conductors 440-d of anothermemory array 110-e, such that rows of memory cells 105-e may be commonlyactivated across multiple memory arrays 110-e, including memory arrays110-e across multiple levels 420-d, or memory arrays 110-e acrossmultiple sets 710-a, or both (e.g., by a common node or output of ashared row component 125, not shown). In examples that support a common,shared, or otherwise concurrent activation across memory arrays 110-eacross multiple levels 420-d, the word line conductors 440-d-11 and440-d-21 may be coupled with each other, or coupled with a common orshared output of a row component 125, or the word line conductors440-d-31 and 440-d-41 may be coupled with each other, or coupled with acommon or shared output of a row component 125, and so on. In examplesthat support a common, shared, or otherwise concurrent activation acrossmemory arrays 110-e across multiple sets 710-a, the word line conductors440-d-11 and 440-d-31 may be coupled with each other, or coupled with acommon or shared output of a row component 125, or the word lineconductors 440-d-21 and 440-d-41 may be coupled with each other, orcoupled with a common or shared output of a row component 125, and soon. In examples that support a common, shared, or otherwise concurrentactivation across memory arrays 110-e across multiple levels 420-d andsets 710-a, the word line conductors 440-d-11, 440-d-21, 440-d-31, and440-d-41 may be coupled with each other, or coupled with a common orshared output of a row component 125, and so on.

In some examples, interconnections between word line conductors 440-d ofdifferent levels 420-d may be formed at least in part along a direction,such as the z-direction by one or more vias, sockets, or TSVs, which maybe located at or near a boundary of the memory arrays 110-e (e.g., alongthe y-direction), among other locations relative to the memory arrays110-e. In some examples, interconnections between word line conductors440-d of different sets 710-a may be formed at least in part along thex-direction by one or more routing levels or layers, which may belocated at a different position along the z-direction than the memoryarrays 110-e, such as locations above, below, or between the memoryarrays 110-e, among other locations.

Each capacitor 320-e for a memory cell 105-e may include a respectivedielectric portion 450-d formed between a pillar 430-d associated withthe memory cell 105-e and a plate conductor 460-d (e.g., an example of aplate line 140, a plate node, or a common plate). In some examples, aportion of a pillar 430-d of a capacitor 320-e may be a same material orcombination of materials as a portion of the pillar 430-c of acorresponding cell selection component 330-e (e.g., a dopedsemiconductor material, a polycrystalline semiconductor). In someexamples, a portion of a pillar 430-d of capacitor 320-e may be orinclude a different material or combination of materials as a portion ofthe pillar 430-d of a corresponding cell selection component 330-e(e.g., a metal or conductor portion, a metal layer deposited over asurface of the pillar 430-d). In some examples, the dielectric portions450-d may be formed with a ferroelectric material operable to maintain anon-zero electric charge (e.g., corresponding to a stored logic state)in the absence of an electric field.

In the example of memory structure 700, each of the memory arrays 110-emay be associated with (e.g., coupled with, include, be accessed using)a respective plate conductor 460-d. Each of the plate conductors 460-dmay be coupled with a plate component 145 (not shown) for respectivelybiasing the plate conductors 460-d. In the example of memory structure700, each plate conductor 460-d may be associated with at least a columnof memory cells 105-e. In some examples, each of the plate conductors460-d may also extend along the y-direction along a row of memory cells105-e, in which case each of the plate conductors 460-d may beassociated with all of the memory cells 105-e of a respective memoryarray 110-e.

In the example of memory structure 700, at least some, if not eachcolumn of memory cells 105-e of at least some, if not each memory array110-e may be associated with a respective transistor 380-e, which mayalso be formed as a vertical transistor. At least some, if not eachtransistor 380-e may be operable to couple a respective digit lineconductor 410-d with an intermediate line conductor 465-d (e.g., anexample of an intermediate line 365). In the example of memory structure700, to support m columns per memory array 110-e, m intermediate lineconductors 465-d may be formed along the y-direction, and eachintermediate line conductor 465-d may be coupled or connected with atransistor 380-e associated with each memory array 110-e of each of thelevels 420-d and each of the sets 710-a (e.g., intermediate lineconductor 465-d-1 being coupled with transistors 380-e-11, 380-e-21,380-e-31 and 380-e-41). The set of m intermediate line conductors 465-dmay be coupled with a column decoder 360-d, which may, in turn, becoupled with or otherwise operable to couple with a sense component150-e.

At least some, if not each deck selection transistor 380-e may include achannel portion (e.g., a vertical channel) formed at least in part byone or more respective pillars 470-d and a gate portion formed at leastin part by one or more respective deck selection conductors 480-d (e.g.,an example of a deck selection line 375). In some examples, the gateportion of a transistor 380-e may be a portion or a region of a deckselection line 375 that is operable to activate the channel portion(e.g., to modulate a conductivity of the channel portion) of thetransistor 380-e. The deck selection conductors 480-d may extend fromone column of memory cells 105-e to another, or from one transistor380-e to another, along a direction, such as the y-direction (e.g.,along a row direction, along a row of memory cells 105), and may becoupled with a deck decoder 370 (not shown) for selecting or activatinga memory array 110-e (e.g., by biasing the deck selection conductors480-d, by activating a row of transistors 380-e).

The example of memory structure 700 illustrates a configuration whereeach of the transistors 380 may be on a same level 420. For example,each of the transistors 380-e-11, 380-e-21, 380-e-31, and 380-e-41, andrespective repetitions along the y-direction for a quantity of columns,may be within or otherwise associated with the level 420-d-1. In someexamples, such a configuration may support the pillars 470-d and deckselection conductors 480-d for all the transistors 380-e of the memorystructure 700 being formed with common processes, or being otherwiseformed concurrently.

In some examples, the configuration of the memory structure 700 may besupported by respective conductors 740 operable for coupling between theintermediate line conductors 465-d and the digit line conductors 410-dof the level 420-d-1. For example, the conductor 740-a-11 may beoperable for coupling between the intermediate line conductor 465-d-1(e.g., via the transistor 380-e-11) and the digit line conductor410-d-11 (e.g., via a transistor 720-a-11 or other circuitry), theconductor 740-a-31 may be operable for coupling between the intermediateline conductor 465-d-1 (e.g., via the transistor 380-e-31) and the digitline conductor 410-d-31 (e.g., via a transistor 720-a-31 or othercircuitry), and so on.

In some examples, the conductors 740 may be formed as part of a metallayer processing, which may include various deposition operations, oretching operations, or both.

In some examples, such processing may also include forming conductorportions 750 coupled with or otherwise associated with the each of thedigit line conductors 410-d of the second level 420-d-2. Each of theconductor portions 750 may be coupled with the respective digit lineconductor 410-d (e.g., along the z-direction) by a respective conductorportion 755 (e.g., a vertical conductor), which may include one or morevias, sockets, or TSVs between the digit line conductor 410-d and therespective conductor portion 750. In some examples, to relievedimensional tolerances or precision requirements for connections betweenthe levels 420-d (e.g., an “at pitch” tolerance, related to pitch orrepetition of digit line conductors 410-d or memory cells 105-e alongthe y-direction, such as a column pitch), the conductor portions 755 maybe implemented in a varying approach, such as a staggered approach,where conductor portions 755 of columns adjacent to each other along they-direction may be located in different positions along the x-directionaccording to various staggering techniques or repetitions. A staggeredapproach may, among other benefits, improve interconnection accuracy ortolerance for interconnections between levels 420-d, or may supportrelatively larger cross-sectional area (e.g., in an xy-plane) for thetop of the conductor portions 755 (e.g., an end relatively farther fromthe substrate 220-d) than at the bottom of the conductor portions 755,which may be associated with an etching process used to etch holes fordepositing a conductive material for the conductor portions 755 (e.g.,where such an etching process may expand an upper cross-section in anxy-plane as the etching proceeds downward along the z-direction).

At least some, if not each transistor 720-a may include a channelportion (e.g., a vertical channel) formed at least in part by one ormore respective pillars 730 and a gate portion formed at least in partby one or more respective conductors 725. In some examples, the gateportion of a transistor 720-a may be a portion or a region of aconductor 725 that is operable to activate the channel portion (e.g., tomodulate a conductivity of the channel portion) of the transistor 720-a.The conductors 725 may extend from one column of memory cells 105-e toanother, or from one transistor 720-a to another, along a direction,such as the y-direction (e.g., along a row direction, along a row ofmemory cells 105).

In some examples, the pillars 730 may be formed with common processes,or common materials, as the pillars 470-d, in which case the transistors720-a may be formed as a same type of transistor as the transistors380-e (e.g., n-type transistors or p-type transistors). In someexamples, the pillars 730 and pillars 470-d may be formed with differentprocesses, or different materials, in which case the transistors 720-amay be formed as a different type of transistor than the transistors380-e. Although the example of memory structure 700 illustrates anexample with transistors 380-e coupled with (e.g., formed upon) theintermediate line conductors 465-d and the transistors 720-a coupledwith (e.g., formed upon) the digit line conductors 410-d, in someexamples, the relative positions may be swapped such that transistors380-e may be coupled with (e.g., formed upon) the digit line conductors410-d the and the transistors 720-a may be coupled with (e.g., formedupon) the intermediate line conductors 465-d.

The transistors 720-a may, in some examples, be activated according tovarious techniques to support the operation of the memory structure 700.In some examples, the transistors may be configured in an “always on”configuration, where the conductors 725 may be activated whenever poweror voltage is applied to or provided to the memory structure 700, orwhenever the memory structure 700 is operable for supporting accessoperations (e.g., operating in an active mode). In some examples, thetransistors 720-a may be configured to be activated during an access ofthe first memory array, of the second memory array, of the third memoryarray, or of the fourth memory array, or of any combination thereof. Insome examples, the transistors 720-a may be activated when acorresponding memory array 110-e is selected for an access operation, inwhich case the corresponding transistors 380-e and the correspondingtransistors 720 may both be activated (e.g., activating the transistors380-e-11 and 720-a-11, and the respective repeated transistors along they-direction, during access of the memory array 110-e-1). In someexamples, such a combined or concurrent activation may be performedusing a deck decoder 370, among other circuitry. Although the example ofmemory structure 700 includes the transistors 720-a, in some examples,the transistors 720-a may be replaced with metal conductors (e.g., vias,sockets, TSVs) that electrically connect the digit line conductors 410-dwith the respective conductors 740-a.

In some examples, circuitry of a deck decoder 370 (not shown), thecolumn decoder 360-c, or the sense component 150-d, or any combinationthereof may be substrate-based, such as including transistors formed atleast in part by a doped portion of the substrate 220-c (e.g., inaccordance with the transistor structure 200, transistors configured ina CMOS arrangement). By including the transistors 380-d in locationsabove the substrate 220-c, the memory structure 600 may support improvedflexibility for distributing decoding circuitry throughout a memory die,which may improve area utilization, or semiconductor substrate materialutilization, among other benefits. Moreover, in some examples, such aconfiguration may support an auxiliary circuitry region 760 (e.g.,within or otherwise associated with the level 420-d-2) to be allocatedto other circuitry that supports the operation of the memory structure700. For example, the auxiliary circuitry region 760 may provide aregion for forming power or voltage supply circuitry, such as capacitorsthat support power or voltage regulation or other signal conditioningfor operation of the memory structure 700.

The examples of memory structures 400, 500, 600, and 700 illustratevarious techniques for implementing deck selection in accordance withexamples as disclosed herein, including techniques illustratedschematically in the circuit 300. In some examples, a memory device 100or associated memory die may implement multiple instances of one of thememory structures 400, 500, 600, or 700. For example, any of the memorystructures 400, 500, 600, or 700 may be associated with across-sectional area (e.g., a span or extent along the x-direction andy-direction, a span or extent in an xy-plane) or a pitch (e.g., adistance of repetition along the x-direction, a distance of repetitionalong the y-direction), and one or more aspects of the respective memorystructure may be repeated or extended along the x-direction, ory-direction, or both to expand a storage capacity of a memory device 100or associated memory die. In some examples, each such repetition may beindependently operable or addressable, which may support various aspectsof parallel or otherwise concurrent access operations among repetitionsof the respective memory structure. In some examples, a memory device100 or associated memory die may implement instances of two or more ofthe memory structures 400, 500, 600, or 700, or both, or may combineaspects of two or more of the respective memory structures.

FIG. 8 shows a flowchart illustrating a method 800 that supports thinfilm transistor deck selection in a memory device in accordance withexamples as disclosed herein. The operations of method 800 may beimplemented by a manufacturing system or one or more controllersassociated with a manufacturing system. In some examples, one or morecontrollers may execute a set of instructions to control the functionalelements of the manufacturing system to perform the described functions.Additionally or alternatively, one or more controllers may performaspects of the described functions using special-purpose hardware.

At 805, the method may include forming a sense component (e.g., a sensecomponent 150) operable for sensing memory cells of a memory die. Theoperations of 805 may be performed in accordance with examples andtechniques as disclosed herein, including one or more aspects describedwith reference to FIGS. 1 through 3 and 7.

At 810, the method may include forming a column decoder (e.g., a columndecoder 360) of the memory die operable to couple with the sensecomponent. The operations of 810 may be performed in accordance withexamples and techniques as disclosed herein, including one or moreaspects described with reference to FIGS. 1 through 3 and 7.

At 815, the method may include forming a first memory array associatedwith a first level above a substrate of the memory die, the first memoryarray including a first subset of the memory cells and a plurality offirst digit lines each operable to couple with the column decoder via arespective first transistor (e.g., a transistor 380) of the first level.The operations of 815 may be performed in accordance with examples andtechniques as disclosed herein, including one or more aspects describedwith reference to FIGS. 1 through 3 and 7.

At 820, the method may include forming a second memory array associatedwith the first level, the second memory array including a second subsetof the memory cells and a plurality of second digit lines each operableto couple with the column decoder via a respective second transistor(e.g., a transistor 380) of the first level. The operations of 820 maybe performed in accordance with examples and techniques as disclosedherein, including one or more aspects described with reference to FIGS.1 through 3 and 7.

At 825, the method may include forming a third memory array associatedwith a second level above the substrate of the memory die, the thirdmemory array including a third subset of the memory cells and aplurality of third digit lines each operable to couple with the columndecoder via a respective third transistor (e.g., a transistor 380) ofthe first level. The operations of 825 may be performed in accordancewith examples and techniques as disclosed herein, including one or moreaspects described with reference to FIGS. 1 through 3 and 7.

At 830, the method may include forming a fourth memory array associatedwith the second level, the fourth memory array including a fourth subsetof the memory cells and a plurality of fourth digit lines each operableto couple with the column decoder via a respective fourth transistor(e.g., a transistor 380) of the first level. The operations of 830 maybe performed in accordance with examples and techniques as disclosedherein, including one or more aspects described with reference to FIGS.1 through 3 and 7.

In some examples, an apparatus as described herein may perform a methodor methods, such as the method 800. The apparatus may include, features,circuitry, logic, means, or instructions (e.g., a non-transitorycomputer-readable medium storing instructions executable by a processor)for forming a sense component operable for sensing memory cells of amemory die, forming a column decoder of the memory die operable tocouple with the sense component, forming a first memory array associatedwith a first level above a substrate of the memory die, the first memoryarray including a first subset of the memory cells and a plurality offirst digit lines each operable to couple with the column decoder via arespective first transistor of the first level, forming a second memoryarray associated with the first level, the second memory array includinga second subset of the memory cells and a plurality of second digitlines each operable to couple with the column decoder via a respectivesecond transistor of the first level, forming a third memory arrayassociated with a second level above the substrate of the memory die,the third memory array including a third subset of the memory cells anda plurality of third digit lines each operable to couple with the columndecoder via a respective third transistor of the first level, andforming a fourth memory array associated with the second level, thefourth memory array including a fourth subset of the memory cells and aplurality of fourth digit lines each operable to couple with the columndecoder via a respective fourth transistor of the first level.

Some examples of the method 800 and the apparatus described herein mayfurther include operations, features, circuitry, logic, means, orinstructions for forming a plurality of conductors of the first level(e.g., associated with intermediate lines 365), each coupled with one ofthe first transistors, one of the second transistors, one of the thirdtransistors, one of the fourth transistors, and the column decoder.

In some examples of the method 800 and the apparatus described herein, achannel portion of the one of the first transistors based at least inpart on forming a respective set of one or more first semiconductorpillars (e.g., pillars 470) in contact with the conductor of theplurality of conductors, a channel portion of the one of the secondtransistors based at least in part on forming a respective set of one ormore second semiconductor pillars (e.g., pillars 470) in contact withthe conductor of the plurality of conductors, a channel portion of theone of the third transistors based at least in part on forming arespective set of one or more third semiconductor pillars (e.g., pillars470) in contact with the conductor of the plurality of conductors, and achannel portion of the one of the fourth transistors based at least inpart on forming a respective set of one or more fourth semiconductorpillars (e.g., pillars 470) in contact with the conductor of theplurality of conductors.

Some examples of the method 800 and the apparatus described herein mayfurther include operations, features, circuitry, logic, means, orinstructions for forming one or more first gate conductors (e.g., one ormore deck selection conductors 480) of the first level each operable tomodulate a conductivity of the channel portion of each of the firsttransistors, forming one or more second gate conductors (e.g., one ormore deck selection conductors 480) of the first level each operable tomodulate a conductivity of the channel portion of each of the secondtransistors, forming one or more third gate conductors (e.g., one ormore deck selection conductors 480) of the first level each operable tomodulate a conductivity of the channel portion of each of the thirdtransistors, and forming one or more fourth gate conductors (e.g., oneor more deck selection conductors 480) of the first level each operableto modulate a conductivity of the channel portion of each of the fourthtransistors.

FIG. 9 shows a flowchart illustrating a method 900 that supports thinfilm transistor deck selection in a memory device in accordance withexamples as disclosed herein. The operations of method 900 may beimplemented by memory device 100 or its components as described herein.For example, the operations of method 900 may be performed by a deckdecoder 370, a column decoder 360, or a row component 125, or variouscombinations thereof, as described with reference to FIGS. 1 through 3and 7. In some examples, a memory device 100 may execute a set ofinstructions to control the functional elements of the device to performthe described functions. Additionally or alternatively, the memorydevice 100 may perform aspects of the described functions usingspecial-purpose hardware.

At 905, the method may include identifying a row of memory cells of afirst memory array of a memory die for an access operation, the memorydie including the first memory array in a first level above a substrateof the memory die, a second memory array of the memory die in the firstlevel, a third memory array of the memory die in a second level abovethe substrate, and a fourth memory array of the memory die in the secondlevel. The operations of 905 may be performed in accordance withexamples and techniques as disclosed herein, including one or moreaspects described with reference to FIGS. 1 through 3 and 7. In someexamples, the operations of 905 may be performed by a memory controller170, or a row component 125, or a combination thereof.

At 910, the method may include coupling the row of memory cells with acolumn decoder of the memory die based at least in part on theidentifying. In some examples, coupling the row of memory cells with thecolumn decoder may include coupling the row of memory cells with aplurality of digit lines of the first memory array based at least inpart on activating a plurality of first transistors (e.g., cellselection components 330) of the first level, and coupling the pluralityof digit lines of the first memory array with the column decoder basedat least in part on activating a plurality of second transistors (e.g.,transistors 380) of the second level. The operations of 910 may beperformed in accordance with examples and techniques as disclosedherein, including one or more aspects described with reference to FIGS.1 through 3 and 7. In some examples, the access operation may beperformed after the operations of 910, which may include performing aread operation on one or more memory cells of the identified row, orperforming a write operation on one or more memory cells of theidentified row, or another access operation or combination of accessoperations.

In some examples, an apparatus as described herein may perform a methodor methods, such as the method 900. The apparatus may include, features,circuitry, logic, means, or instructions (e.g., a non-transitorycomputer-readable medium storing instructions executable by a processor)for identifying a row of memory cells of a first memory array of amemory die for an access operation, the memory die including the firstmemory array in a first level above a substrate of the memory die, asecond memory array of the memory die in the first level, a third memoryarray of the memory die in a second level above the substrate, and afourth memory array of the memory die in the second level and couplingthe row of memory cells with a column decoder of the memory die based atleast in part on the identifying, where coupling the row of memory cellswith the column decoder includes coupling the row of memory cells with aplurality of digit lines of the first memory array based at least inpart on activating a plurality of first transistors of the first leveland coupling the plurality of digit lines of the first memory array withthe column decoder based at least in part on activating a plurality ofsecond transistors of the second level.

Some examples of the method 900 and the apparatus described herein mayfurther include operations, features, circuitry, logic, means, orinstructions for isolating a second row of memory cells of the secondmemory array from the column decoder based at least in part on theidentifying, where the isolating the second row of memory cells from thecolumn decoder may include coupling the second row of memory cells witha plurality of digit lines of the second memory array based at least inpart on activating a plurality of third transistors (e.g., cellselection components 330) of the first level and isolating the pluralityof digit lines of the second memory array from the column decoder basedat least in part on deactivating a plurality of fourth transistors(e.g., transistors 380) of the second level.

Some examples of the method 900 and the apparatus described herein mayfurther include operations, features, circuitry, logic, means, orinstructions for isolating a third row of memory cells of the thirdmemory array from the column decoder based at least in part on theidentifying, where the isolating the third row of memory cells from thecolumn decoder may include coupling the third row of memory cells with aplurality of digit lines of the third memory array based at least inpart on activating a plurality of fifth transistors (e.g., cellselection components 330) of the second level and isolating theplurality of digit lines of the third memory array from the columndecoder based at least in part on deactivating a plurality of sixthtransistors (e.g., transistors 380) of the second level.

Some examples of the method 900 and the apparatus described herein mayfurther include operations, features, circuitry, logic, means, orinstructions for coupling, based at least in part on enabling access ofthe memory die, the plurality of digit lines of the third memory arraywith the plurality of sixth transistors based at least in part onactivating a plurality of seventh transistors (e.g., transistors 720) ofthe second level.

It should be noted that the methods described herein are possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, portions from two or more of the methods may be combined.

An apparatus is described. The apparatus may include a sense component(e.g., a sense component 150) operable for sensing memory cells of amemory die, a column decoder (e.g., a column decoder 360) of the memorydie operable to couple with the sense component, a first memory arrayassociated with a first level above a substrate of the memory die, thefirst memory array including a first subset of the memory cells and aplurality of first digit lines each operable to couple with the columndecoder via a respective first transistor (e.g., a transistor 380) ofthe first level, a second memory array associated with the first level,the second memory array including a second subset of the memory cellsand a plurality of second digit lines each operable to couple with thecolumn decoder via a respective second transistor (e.g., a transistor380) of the first level, a third memory array associated with a secondlevel above the substrate of the memory die, the third memory arrayincluding a third subset of the memory cells and a plurality of thirddigit lines each operable to couple with the column decoder via arespective third transistor (e.g., a transistor 380) of the first level,and a fourth memory array associated with the second level, the fourthmemory array including a fourth subset of the memory cells and aplurality of fourth digit lines each operable to couple with the columndecoder via a respective fourth transistor (e.g., a transistor 380) ofthe first level.

In some examples, the apparatus may include a plurality of conductors(e.g., of a plurality of intermediate lines 365) of the first level,each coupled with one of the first transistors, one of the secondtransistors, one of the third transistors, one of the fourthtransistors, and the column decoder.

In some examples of the apparatus, for each conductor of the pluralityof conductors, a channel portion of the one of the first transistorsincludes a respective set of one or more first semiconductor pillars(e.g., pillars 470) in contact with the conductor of the plurality ofconductors, a channel portion of the one of the second transistorsincludes a respective set of one or more second semiconductor pillars(e.g., pillars 470) in contact with the conductor of the plurality ofconductors, a channel portion of the one of the third transistorsincludes a respective set of one or more third semiconductor pillars(e.g., pillars 470) in contact with the conductor of the plurality ofconductors, and a channel portion of the one of the fourth transistorsincludes a respective set of one or more fourth semiconductor pillars(e.g., pillars 470) in contact with the conductor of the plurality ofconductors.

In some examples, the apparatus may include one or more first gateconductors (e.g., one or more deck selection conductors 480) of thefirst level each operable to modulate a conductivity of the channelportion of each of the first transistors, one or more second gateconductors (e.g., one or more deck selection conductors 480) of thefirst level each operable to modulate a conductivity of the channelportion of each of the second transistors, one or more third gateconductors (e.g., one or more deck selection conductors 480) of thefirst level each operable to modulate a conductivity of the channelportion of each of the third transistors, and one or more fourth gateconductors (e.g., one or more deck selection conductors 480) of thefirst level each operable to modulate a conductivity of the channelportion of each of the fourth transistors.

In some examples of the apparatus, each memory cell of the first subsetof the memory cells may be associated with a respective fifth transistor(e.g., a cell selection component 330) operable to couple the memorycell with a digit line of the plurality of first digit lines, each ofthe fifth transistors including a respective channel portion including arespective set of one or more fifth semiconductor pillars (e.g., pillars430), each memory cell of the second subset of the memory cells may beassociated with a respective sixth transistor (e.g., a cell selectioncomponent 330) operable to couple the memory cell with a digit line ofthe plurality of second digit lines, each of the sixth transistorsincluding a respective channel portion including a respective set of oneor more sixth semiconductor pillars (e.g., pillars 430), each memorycell of the third subset of the memory cells may be associated with arespective seventh transistor (e.g., a cell selection component 330)operable to couple the memory cell with a digit line of the plurality ofthird digit lines, each of the seventh transistors including arespective channel portion including a respective set of one or moreseventh semiconductor pillars (e.g., pillars 430), and each memory cellof the fourth subset of the memory cells may be associated with arespective eighth transistor (e.g., a cell selection component 330)operable to couple the memory cell with a digit line of the plurality offourth digit lines, each of the eighth transistors including arespective channel portion including a respective set of one or moreeighth semiconductor pillars (e.g., pillars 430).

In some examples of the apparatus, the one or more first semiconductorpillars, the one or more second semiconductor pillars, the one or morethird semiconductor pillars, the one or more fourth semiconductorpillars, the one or more fifth semiconductor pillars, and the one ormore sixth semiconductor pillars may be overlapping along a heightdimension (e.g., along a z-direction) relative to the substrate and theone or more seventh semiconductor pillars, and the one or more eighthsemiconductor pillars may be overlapping along the height dimensionrelative to the substrate.

In some examples, the apparatus may include a plurality of ninthtransistors (e.g., transistors 720) each operable to couple one of theplurality of conductors with a respective one of the plurality of firstdigit lines and a plurality of tenth transistors (e.g., transistors 720)each operable to couple one of the plurality of conductors with arespective one of the plurality of second digit lines.

In some examples of the apparatus, each of the plurality of ninthtransistors and each of the plurality of tenth transistors may beconfigured to be activated during an access of the first memory array,of the second memory array, of the third memory array, or of the fourthmemory array, or of any combination thereof.

In some examples, the apparatus may include a plurality of fifthtransistors (e.g., cell selection components 330) of the first leveleach operable to couple a respective memory cell of the first subset ofthe memory cells with a digit line of the plurality of first digitlines, a plurality of sixth transistors (e.g., cell selection components330) of the first level each operable to couple a respective memory cellof the second subset of the memory cells with a digit line of theplurality of second digit lines, a plurality of seventh transistors(e.g., cell selection components 330) of the second level each operableto couple a respective memory cell of the third subset of the memorycells with a digit line of the plurality of third digit lines, and aplurality of eighth transistors (e.g., cell selection components 330) ofthe second level each operable to couple a respective memory cell of thefourth subset of the memory cells with a digit line of the plurality offourth digit lines.

In some examples, the apparatus may include a plurality of word lineconductors (e.g., word line conductors 440) each operable to activate arespective row of the plurality of fifth transistors, to activate arespective row of the plurality of sixth transistors, to activate arespective row of the plurality of seventh transistors and to activate arespective row of the plurality of eighth transistors.

In some examples of the apparatus, the column decoder and the sensecomponent each include transistors formed at least in part by a dopedportion of the substrate.

In some examples, the apparatus may include a plurality of voltagecontrol capacitors each located at least in part in the second levelbetween the third memory array and the fourth memory array.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the description may be represented byvoltages, currents, electromagnetic waves, magnetic fields or particles,optical fields or particles, or any combination thereof. Some drawingsmay illustrate signals as a single signal; however, the signal mayrepresent a bus of signals, where the bus may have a variety of bitwidths.

The terms “electronic communication,” “conductive contact,” “connected,”and “coupled” may refer to a relationship between components thatsupports the flow of signals between the components. Components areconsidered in electronic communication with (or in conductive contactwith or connected with or coupled with) one another if there is anyconductive path between the components that can, at any time, supportthe flow of signals between the components. At any given time, theconductive path between components that are in electronic communicationwith each other (or in conductive contact with or connected with orcoupled with) may be an open circuit or a closed circuit based on theoperation of the device that includes the connected components. Theconductive path between connected components may be a direct conductivepath between the components or the conductive path between connectedcomponents may be an indirect conductive path that may includeintermediate components, such as switches, transistors, or othercomponents. In some examples, the flow of signals between the connectedcomponents may be interrupted for a time, for example, using one or moreintermediate components such as switches or transistors.

The term “coupling” refers to condition of moving from an open-circuitrelationship between components in which signals are not presentlycapable of being communicated between the components over a conductivepath to a closed-circuit relationship between components in whichsignals can be communicated between components over the conductive path.When a component, such as a controller, couples other componentstogether, the component initiates a change that allows signals to flowbetween the other components over a conductive path that previously didnot permit signals to flow.

The term “isolated” refers to a relationship between components in whichsignals are not presently capable of flowing between the components.Components are isolated from each other if there is an open circuitbetween them. For example, two components separated by a switch that ispositioned between the components are isolated from each other when theswitch is open. When a controller isolates two components from oneanother, the controller affects a change that prevents signals fromflowing between the components using a conductive path that previouslypermitted signals to flow.

The term “layer” or “level” used herein refers to a stratum or sheet ofa geometrical structure (e.g., relative to a substrate). Each layer orlevel may have three dimensions (e.g., height, width, and depth) and maycover at least a portion of a surface. For example, a layer or level maybe a three dimensional structure where two dimensions are greater than athird, e.g., a thin-film. Layers or levels may include differentelements, components, and/or materials. In some examples, one layer orlevel may be composed of two or more sublayers or sublevels.

The devices discussed herein, including a memory array, may be formed ona semiconductor substrate, such as silicon, germanium, silicon-germaniumalloy, gallium arsenide, gallium nitride, etc. In some examples, thesubstrate is a semiconductor wafer. In other cases, the substrate may bea silicon-on-insulator (SOI) substrate, such as silicon-on-glass (SOG)or silicon-on-sapphire (SOS), or epitaxial layers of semiconductormaterials on another substrate. The conductivity of the substrate, orsub-regions of the substrate, may be controlled through doping usingvarious chemical species including, but not limited to, phosphorous,boron, or arsenic. Doping may be performed during the initial formationor growth of the substrate, by ion-implantation, or by any other dopingmeans.

A switching component or a transistor discussed herein may represent afield-effect transistor (FET) and comprise a three terminal deviceincluding a source, drain, and gate. The terminals may be connected toother electronic elements through conductive materials, e.g., metals.The source and drain may be conductive and may comprise a heavily-doped,e.g., degenerate, semiconductor region. The source and drain may beseparated by a lightly-doped semiconductor region or channel. If thechannel is n-type (i.e., majority carriers are electrons), then the FETmay be referred to as a n-type FET. If the channel is p-type (i.e.,majority carriers are holes), then the FET may be referred to as ap-type FET. The channel may be capped by an insulating gate oxide. Thechannel conductivity may be controlled by applying a voltage to thegate. For example, applying a positive voltage or negative voltage to ann-type FET or a p-type FET, respectively, may result in the channelbecoming conductive. A transistor may be “on” or “activated” when avoltage greater than or equal to the transistor's threshold voltage isapplied to the transistor gate. The transistor may be “off” or“deactivated” when a voltage less than the transistor's thresholdvoltage is applied to the transistor gate.

The description set forth herein, in connection with the appendeddrawings, describes example configurations and does not represent allthe examples that may be implemented or that are within the scope of theclaims. The term “exemplary” used herein means “serving as an example,instance, or illustration,” and not “preferred” or “advantageous overother examples.” The detailed description includes specific details toproviding an understanding of the described techniques. Thesetechniques, however, may be practiced without these specific details. Insome instances, well-known structures and devices are shown in blockdiagram form to avoid obscuring the concepts of the described examples.

In the appended figures, similar components or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If just the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Ifimplemented in software executed by a processor, the functions may bestored on or transmitted over as one or more instructions or code on acomputer-readable medium. Other examples and implementations are withinthe scope of the disclosure and appended claims. For example, due to thenature of software, functions described herein can be implemented usingsoftware executed by a processor, hardware, firmware, hardwiring, orcombinations of any of these. Features implementing functions may alsobe physically located at various positions, including being distributedsuch that portions of functions are implemented at different physicallocations.

For example, the various illustrative blocks and modules described inconnection with the disclosure herein may be implemented or performedwith a general-purpose processor, a DSP, an ASIC, an FPGA or otherprogrammable logic device, discrete gate or transistor logic, discretehardware components, or any combination thereof designed to perform thefunctions described herein. A general-purpose processor may be amicroprocessor, but in the alternative, the processor may be anyprocessor, controller, microcontroller, or state machine. A processormay also be implemented as a combination of computing devices (e.g., acombination of a DSP and a microprocessor, multiple microprocessors, oneor more microprocessors in conjunction with a DSP core, or any othersuch configuration).

As used herein, including in the claims, “or” as used in a list of items(for example, a list of items prefaced by a phrase such as “at least oneof” or “one or more of”) indicates an inclusive list such that, forexample, a list of at least one of A, B, or C means A or B or C or AB orAC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase“based on” shall not be construed as a reference to a closed set ofconditions. For example, an exemplary step that is described as “basedon condition A” may be based on both a condition A and a condition Bwithout departing from the scope of the present disclosure. In otherwords, as used herein, the phrase “based on” shall be construed in thesame manner as the phrase “based at least in part on.”

The description herein is provided to enable a person skilled in the artto make or use the disclosure. Various modifications to the disclosurewill be apparent to those skilled in the art, and the generic principlesdefined herein may be applied to other variations without departing fromthe scope of the disclosure. Thus, the disclosure is not limited to theexamples and designs described herein but is to be accorded the broadestscope consistent with the principles and novel features disclosedherein.

What is claimed is:
 1. An apparatus, comprising: a sense componentoperable for sensing memory cells of a memory die; a column decoder ofthe memory die operable to couple with the sense component; a firstmemory array associated with a first level above a substrate of thememory die, the first memory array comprising a first subset of thememory cells and a plurality of first digit lines each operable tocouple with the column decoder via a respective first transistor of thefirst level; a second memory array associated with the first level, thesecond memory array comprising a second subset of the memory cells and aplurality of second digit lines each operable to couple with the columndecoder via a respective second transistor of the first level; a thirdmemory array associated with a second level above the substrate of thememory die, the third memory array comprising a third subset of thememory cells and a plurality of third digit lines each operable tocouple with the column decoder via a respective third transistor of thefirst level; and a fourth memory array associated with the second level,the fourth memory array comprising a fourth subset of the memory cellsand a plurality of fourth digit lines each operable to couple with thecolumn decoder via a respective fourth transistor of the first level. 2.The apparatus of claim 1, further comprising: a plurality of conductorsof the first level, each coupled with one of the first transistors, oneof the second transistors, one of the third transistors, one of thefourth transistors, and the column decoder.
 3. The apparatus of claim 2,wherein, for each conductor of the plurality of conductors: a channelportion of the one of the first transistors comprises a respective setof one or more first semiconductor pillars in contact with the conductorof the plurality of conductors; a channel portion of the one of thesecond transistors comprises a respective set of one or more secondsemiconductor pillars in contact with the conductor of the plurality ofconductors; a channel portion of the one of the third transistorscomprises a respective set of one or more third semiconductor pillars incontact with the conductor of the plurality of conductors; and a channelportion of the one of the fourth transistors comprises a respective setof one or more fourth semiconductor pillars in contact with theconductor of the plurality of conductors.
 4. The apparatus of claim 3,further comprising: one or more first gate conductors of the first leveleach operable to modulate a conductivity of the channel portion of eachof the first transistors; one or more second gate conductors of thefirst level each operable to modulate a conductivity of the channelportion of each of the second transistors; one or more third gateconductors of the first level each operable to modulate a conductivityof the channel portion of each of the third transistors; and one or morefourth gate conductors of the first level each operable to modulate aconductivity of the channel portion of each of the fourth transistors.5. The apparatus of claim 3, wherein: each memory cell of the firstsubset of the memory cells is associated with a respective fifthtransistor operable to couple the memory cell with a digit line of theplurality of first digit lines, each of the fifth transistors comprisinga respective channel portion comprising a respective set of one or morefifth semiconductor pillars; each memory cell of the second subset ofthe memory cells is associated with a respective sixth transistoroperable to couple the memory cell with a digit line of the plurality ofsecond digit lines, each of the sixth transistors comprising arespective channel portion comprising a respective set of one or moresixth semiconductor pillars; each memory cell of the third subset of thememory cells is associated with a respective seventh transistor operableto couple the memory cell with a digit line of the plurality of thirddigit lines, each of the seventh transistors comprising a respectivechannel portion comprising a respective set of one or more seventhsemiconductor pillars; and each memory cell of the fourth subset of thememory cells is associated with a respective eighth transistor operableto couple the memory cell with a digit line of the plurality of fourthdigit lines, each of the eighth transistors comprising a respectivechannel portion comprising a respective set of one or more eighthsemiconductor pillars.
 6. The apparatus of claim 5, wherein: the one ormore first semiconductor pillars, the one or more second semiconductorpillars, the one or more third semiconductor pillars, the one or morefourth semiconductor pillars, the one or more fifth semiconductorpillars, and the one or more sixth semiconductor pillars are overlappingalong a height dimension relative to the substrate, and the one or moreseventh semiconductor pillars, and the one or more eighth semiconductorpillars are overlapping along the height dimension relative to thesubstrate.
 7. The apparatus of claim 3, further comprising: a pluralityof ninth transistors each operable to couple one of the plurality ofconductors with a respective one of the plurality of first digit lines;and a plurality of tenth transistors each operable to couple one of theplurality of conductors with a respective one of the plurality of seconddigit lines.
 8. The apparatus of claim 7, wherein each of the pluralityof ninth transistors and each of the plurality of tenth transistors areconfigured to be activated during an access of the first memory array,of the second memory array, of the third memory array, or of the fourthmemory array, or of any combination thereof.
 9. The apparatus of claim1, further comprising: a plurality of fifth transistors of the firstlevel each operable to couple a respective memory cell of the firstsubset of the memory cells with a digit line of the plurality of firstdigit lines; a plurality of sixth transistors of the first level eachoperable to couple a respective memory cell of the second subset of thememory cells with a digit line of the plurality of second digit lines; aplurality of seventh transistors of the second level each operable tocouple a respective memory cell of the third subset of the memory cellswith a digit line of the plurality of third digit lines; and a pluralityof eighth transistors of the second level each operable to couple arespective memory cell of the fourth subset of the memory cells with adigit line of the plurality of fourth digit lines.
 10. The apparatus ofclaim 9, further comprising: a plurality of word line conductors eachoperable to activate a respective row of the plurality of fifthtransistors, to activate a respective row of the plurality of sixthtransistors, to activate a respective row of the plurality of seventhtransistors and to activate a respective row of the plurality of eighthtransistors.
 11. The apparatus of claim 1, wherein the column decoderand the sense component each comprise transistors formed at least inpart by a doped portion of the substrate.
 12. The apparatus of claim 1,further comprising: a plurality of voltage control capacitors eachlocated at least in part in the second level between the third memoryarray and the fourth memory array.
 13. A method, comprising: forming asense component operable for sensing memory cells of a memory die;forming a column decoder of the memory die operable to couple with thesense component; forming a first memory array associated with a firstlevel above a substrate of the memory die, the first memory arraycomprising a first subset of the memory cells and a plurality of firstdigit lines each operable to couple with the column decoder via arespective first transistor of the first level; forming a second memoryarray associated with the first level, the second memory arraycomprising a second subset of the memory cells and a plurality of seconddigit lines each operable to couple with the column decoder via arespective second transistor of the first level; forming a third memoryarray associated with a second level above the substrate of the memorydie, the third memory array comprising a third subset of the memorycells and a plurality of third digit lines each operable to couple withthe column decoder via a respective third transistor of the first level;and forming a fourth memory array associated with the second level, thefourth memory array comprising a fourth subset of the memory cells and aplurality of fourth digit lines each operable to couple with the columndecoder via a respective fourth transistor of the first level.
 14. Themethod of claim 13, further comprising: forming a plurality ofconductors of the first level, each coupled with one of the firsttransistors, one of the second transistors, one of the thirdtransistors, one of the fourth transistors, and the column decoder. 15.The method of claim 14, further comprising forming on each conductor ofthe plurality of conductors: a channel portion of the one of the firsttransistors based at least in part on forming a respective set of one ormore first semiconductor pillars in contact with the conductor of theplurality of conductors; a channel portion of the one of the secondtransistors based at least in part on forming a respective set of one ormore second semiconductor pillars in contact with the conductor of theplurality of conductors; a channel portion of the one of the thirdtransistors based at least in part on forming a respective set of one ormore third semiconductor pillars in contact with the conductor of theplurality of conductors; and a channel portion of the one of the fourthtransistors based at least in part on forming a respective set of one ormore fourth semiconductor pillars in contact with the conductor of theplurality of conductors.
 16. The method of claim 13, further comprising:forming one or more first gate conductors of the first level eachoperable to modulate a conductivity of the channel portion of each ofthe first transistors; forming one or more second gate conductors of thefirst level each operable to modulate a conductivity of the channelportion of each of the second transistors; forming one or more thirdgate conductors of the first level each operable to modulate aconductivity of the channel portion of each of the third transistors;and forming one or more fourth gate conductors of the first level eachoperable to modulate a conductivity of the channel portion of each ofthe fourth transistors.
 17. A method, comprising: identifying a row ofmemory cells of a first memory array of a memory die for an accessoperation, the memory die comprising the first memory array in a firstlevel above a substrate of the memory die, a second memory array of thememory die in the first level, a third memory array of the memory die ina second level above the substrate, and a fourth memory array of thememory die in the second level; and coupling the row of memory cellswith a column decoder of the memory die based at least in part on theidentifying, wherein coupling the row of memory cells with the columndecoder comprises: coupling the row of memory cells with a plurality ofdigit lines of the first memory array based at least in part onactivating a plurality of first transistors of the first level; andcoupling the plurality of digit lines of the first memory array with thecolumn decoder based at least in part on activating a plurality ofsecond transistors of the second level.
 18. The method of claim 17,further comprising: isolating a second row of memory cells of the secondmemory array from the column decoder based at least in part on theidentifying, wherein the isolating the second row of memory cells fromthe column decoder comprises: coupling the second row of memory cellswith a plurality of digit lines of the second memory array based atleast in part on activating a plurality of third transistors of thefirst level; and isolating the plurality of digit lines of the secondmemory array from the column decoder based at least in part ondeactivating a plurality of fourth transistors of the second level. 19.The method of claim 17, further comprising: isolating a third row ofmemory cells of the third memory array from the column decoder based atleast in part on the identifying, wherein the isolating the third row ofmemory cells from the column decoder comprises: coupling the third rowof memory cells with a plurality of digit lines of the third memoryarray based at least in part on activating a plurality of fifthtransistors of the second level; and isolating the plurality of digitlines of the third memory array from the column decoder based at leastin part on deactivating a plurality of sixth transistors of the secondlevel.
 20. The method of claim 17, further comprising: coupling, basedat least in part on enabling access of the memory die, the plurality ofdigit lines of the third memory array with the plurality of sixthtransistors based at least in part on activating a plurality of seventhtransistors of the second level.